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Single-electron quantum dots in silicon MOS structures

Applied Physics A volume 71, pages 415–421 (2000)Cite this article

Abstract.

We present experimental results for two types of quantum dots, which are embedded within a silicon metal-oxide-semiconductor structure. Evidence is found for single-electron charging at low temperature, and for an asymmetric shape of the dot. First results of simulations of these dots are presented.

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Authors and Affiliations

  1. Department of Electrical Engineering and Center for Solid State Electronics Research Arizona State University, Tempe, AZ 85287-5706, USA, , , , , , US

    M. Khoury, A. Gunther, S. Miličić, J. Rack, S.M. Goodnick, D. Vasileska, T.J. Thornton & D.K. Ferry

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  1. M. Khoury
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  2. A. Gunther
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  3. S. Miličić
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  4. J. Rack
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  5. S.M. Goodnick
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  6. D. Vasileska
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  7. T.J. Thornton
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  8. D.K. Ferry
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Additional information

Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000

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Khoury, M., Gunther, A., Miličić, S. et al. Single-electron quantum dots in silicon MOS structures. Appl Phys A 71, 415–421 (2000). https://doi.org/10.1007/s003390000554

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  • DOI: https://doi.org/10.1007/s003390000554

  • PACS: 73.23.Hk; 73.40.Gk; 71.10.Ca