Abstract.
We present experimental results for two types of quantum dots, which are embedded within a silicon metal-oxide-semiconductor structure. Evidence is found for single-electron charging at low temperature, and for an asymmetric shape of the dot. First results of simulations of these dots are presented.
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Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000
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Khoury, M., Gunther, A., Miličić, S. et al. Single-electron quantum dots in silicon MOS structures. Appl Phys A 71, 415–421 (2000). https://doi.org/10.1007/s003390000554
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DOI: https://doi.org/10.1007/s003390000554