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Nanohybrid embedded ferroelectric polymer blend for bipolar memristive application

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Abstract

Nanohybrid comprising two-dimensional (2D) materials have surfaced as potential building blocks for manipulating carrier confinement and transportation in electronic devices. The embedded defects in the nanohybrid, more precisely in the semiconductor counterparts, create localized electronic states that primarily impact the carrier transport properties. Herein, nanohybrid of reduced graphene oxide-tin disulfide (rGO-SnS2) with numerous vacancy-induced defect states were synthesized and reinforced with poly (methyl methacrylate) (PMMA), poly (vinylidene fluoride) (PVDF), and PMMA-PVDF (20:80) blend to investigate the memristive characteristics in a metal–insulator–metal (MIM) configuration. XRD analysis demonstrates a comparatively larger crystallite size of SnS2 in rGO-SnS2 nanohybrid (27.31 nm) than in pristine material (15.85 nm), indicating improved nucleation and template-supported growth of SnS2. The nanohybrid encapsulated polymer films promote improved charge transfer through the fillers-encased polymer matrices. The polymer blend featuring rGO-SnS2 displays ferroelectric β-crystal phases with rich sulfur vacancies in the semiconductor counterparts, verified using Electron Paramagnetic Resonance (EPR) analysis. Devices composed of rGO-SnS2 nanohybrid without polymer do not exhibit any memory characteristics. On the contrary, the devices show distinct memory features, such as write-once-read-many (WORM) and bipolar (with ION/IOFF ratio ~ 10–104) behavior, when nanohybrid is reinforced with PMMA and PVDF/or polymer blend. The internal electric field (Ein) in ferroelectric PVDF assists in de-trapping charge carriers from the sulfur vacancies, exhibiting a non-volatile bipolar memory neither observed for PMMA-based devices. Higher surface roughness leads to uneven current distribution and non-uniform switching for nanohybrid-embedded polymer films. A theoretical model is proposed to elucidate the carrier transport mechanism, adhering to Ohm’s law, and space charge limited current (SCLC) in the low resistance state (LRS) and high resistance state (HRS), respectively.

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Acknowledgements

The authors are thankful to the Central Instrumentation Facility (CIF), NIT Silchar, CIF, IIT Guwahati, Advanced Materials Research Centre (AMRC), IIT Mandi, Central Equipment Facilities and Technical Research Centre (TRC), S.N. Bose National Centre for Basic Sciences (SNBNCBS), Kolkata, for providing material characterization facilities. AC would like to thank SNBNCBS for the financial support provided under the internal project (File No. SNB/ANP-AC/21-22/272). This work was financially supported by the Science and Engineering Research Board (SERB), Department of Science and Technology (DST), Government of India (Grant no. CRG/2022/001145).

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  1. Department of Physics, National Institute of Technology Silchar, Silchar, Assam, 788010, India

    Nipom Sekhar Das & Asim Roy

  2. Department of Condensed Matter and Materials Physics, S.N. Bose National Centre for Basic Sciences, JD Block, Sector-III, Salt Lake City, Kolkata, West Bengal, 700106, India

    Rajesh Jana & Avijit Chowdhury

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NSD: conceptualization, methodology, software, and writing—original draft. RJ: data curation, visualization, and software. AR: supervision, resources, and writing-review and editing. AC: conceptualization, supervison, resources, writing—reviewing. All authors read and approved the final manuscript.

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Correspondence to Avijit Chowdhury.

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Das, N.S., Jana, R., Roy, A. et al. Nanohybrid embedded ferroelectric polymer blend for bipolar memristive application. Appl. Phys. A 129, 796 (2023). https://doi.org/10.1007/s00339-023-07081-3

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