Abstract
This study focuses on the preparation of PbI2 and PbI2:Sn thin films using inexpensive chemical bath deposition (CBD) method. The structural, optical, and electrical properties of the PbI2 film before and after doping with Sn dopant were studied. X-ray diffraction (XRD) confirmed that the grown PbI2 and Sn-doped PbI2 films are crystalline, exhibiting a hexagonal phase, while peaks corresponding to the SnI4 phase were detected. The energy-dispersive X-ray (EDX) analysis and elemental mapping results reveal the presence of the Sn dopant. Scanning electron microscopy (SEM) studies confirm that the prepared PbI2 and Sn-doped PbI2 films have a hexagonal structure. The energy gap of the deposited PbI2 film decreases from 2.7 to 2.5 eV after doping with Sn. The room-temperature current–voltage characteristics of PbI2/Si and PbI2:Sn/Si heterojunction photodetectors were measured under dark and illumination conditions. The spectral responsivity, specific detectivity, and external quantum efficiency of the photodetectors were determined before and after doping. The peak response of the PbI2/Si photodetector was found at 550 nm with a responsivity of 0.08 A/W, while the peak response of the PbI2:Sn/Si photodetector was located at 500 nm with a responsivity of 0.29 A/W. The external quantum efficiency of PbI2/Si and PbI2:Sn/Si was 18 and 82%, respectively. The specific detectivity of the photodetector increases from 3.1 × 1011 to 9.2 × 1011 after doping. The energy band diagram of PbI2:Sn/Si under illumination is presented.
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The datasets generated during and/or analyzed during the current study are available from the corresponding author (Raid A. Ismail)) on reasonable request.
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The authors would like to express their gratitude to the Applied Science department/University of Technology for their logic and technical assistance.
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Raid and Noor conceived of the presented idea. Noor and Raid supervised the finding of this work. All authors conducted the experiments. Raid and Mohammed provided critical feedback and helped shape the research, analysis and manuscript.
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Hasan, N., Ismail, R.A. & Hamza, M.S. Studying the effect of Sn doping on the optoelectronic properties of PbI2 nanosheets/Si heterojunction photodetector prepared by chemical bath deposition. Appl. Phys. A 129, 695 (2023). https://doi.org/10.1007/s00339-023-06979-2
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DOI: https://doi.org/10.1007/s00339-023-06979-2