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Fast switching photodetector based on HfO2 thin film deposited using electron beam evaporation technique

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Abstract

This study reports the electrical properties of a fast-switching photodetector based on a Hafnium Oxide (HfO2) thin film (TF) device with gold (Au) Schottky electrodes. It also presents the deposition of an HfO2 TF device using a conventional electron beam evaporation method on p-type Silicon (Si) substrates. XRD analysis confirmed the amorphous structural nature of HfO2 TF, and cross-sectional FESEM analysis shows growth of ~ 140 nm HfO2 on the p-Si substrate. Fourier transforms infrared (FTIR) analysis confirms the HfO2 bonding. Furthermore, the UV–Vis spectroscopy demonstrates that the device exhibits predominant absorption within the UV region. At room temperature, the electrical analysis of the HfO2 TF device was conducted. The device shows a good detectivity (D*) of 1.30 \(\times\) 1012 Jones, a low noise equivalent power (NEP) value of 3.23 \(\times\) 10–12 W, and a responsivity of 300 mA/W with an internal gain of 1.49. It was also observed that the device has a fast-switching response at + 2 V with fall and rise times of 94 ms and 93 ms, respectively, making it a suitable device for photodetector application.

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Acknowledgements

We acknowledge NIT Nagaland for IV measurement, XRD analysis, financial support and NIT Durgapur for FESEM characterization. Also, the authors would like to acknowledge the Deanship of Scientific Research, Vice Presidency for Graduate Studies and Scientific Research, King Faisal University, Saudi Arabia [Project No. GRANT3811] for their support.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Nagaland, 797103, India

    Borish Moirangthem & Naorem Khelchand Singh

  2. Department of Physics, College of Science, King Faisal University, 31982, Al-Hassa, Saudi Arabia

    Mir Waqas Alam

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  1. Borish Moirangthem
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Contributions

BM did the primary literature review. BM and NKS did the deposition and results analysis like XRD, SEM, and IV analysis. The Absorption measurement and analysis was done by MWA. Finally, all the authors were involved in the preparation of the manuscript. The finalized manuscript was read and approved by all the authors.

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Correspondence to Naorem Khelchand Singh.

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Moirangthem, B., Alam, M.W. & Singh, N.K. Fast switching photodetector based on HfO2 thin film deposited using electron beam evaporation technique. Appl. Phys. A 129, 622 (2023). https://doi.org/10.1007/s00339-023-06907-4

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