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The FAPbI3 perovskite memristor with a PMMA passivation layer as an artificial synapse

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Abstract

Memristors have received widespread attention as a new type of nonvolatile memory device, which are promising to mimic synapse dynamics efficiently. In this work, a memristor with the structure of PMMA/Ag/FAPbI3/FTO was fabricated and memristive behavior was investigated. With PMMA as the passivation layer in this structure, the performance as well as stability of the FAPbI3 memristor was significantly improved, as compared with non-passivated device. The results show that the device with passivation layer has better stability in the air (20 days) and excellent artificial synaptic functions, such as spike timing-dependent plasticity (STDP), long-term potentiation (LTP) and long-term depression (LTD). This work demonstrates the great potential of PMMA-passivated perovskite memristor in neuromorphic computing.

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Authors and Affiliations

  1. School of Integrated Circuits, Guangdong University of Technology, Guangzhou, 510006, People’s Republic of China

    Yuheng Wu, Xuanhao Cao, Zehong Lei, Jianfeng Zhang, Aixiang Wei & Zhen Liu

  2. School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, People’s Republic of China

    Huiyan Huang, Chao Xu & Yu Zhao

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  1. Yuheng Wu
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  2. Huiyan Huang
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Wu, Y., Huang, H., Xu, C. et al. The FAPbI3 perovskite memristor with a PMMA passivation layer as an artificial synapse. Appl. Phys. A 129, 364 (2023). https://doi.org/10.1007/s00339-023-06632-y

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