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Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures

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Abstract

In this work, the effects of the substrate material on the electrical properties of self-assembled InAs quantum dots (QDs)-based laser structures have been reported. Two InAs QD laser structures with the same active regions deposited on GaAs and Si substrates utilizing strain reducing layer (SRL) containing GaAs/InGaAs have been investigated using current–voltage (I–V), capacitance–voltage, and Deep-Level Transient Spectroscopy (DLTS) techniques. The I–V measurements illustrated that the rectification ratio (IF/IR) and built-in potential (ϕB) for the sample deposited on Si substrate are higher than that of sample deposited on GaAs substrate. However, the series resistance (Rs) of the InAs QDs deposited on Si substrate is lower than that of the InAs QDs deposited on GaAs substrate. The DLTS and Laplace-DLTS measurements showed that the number of traps in InAs QDs/GaAs devices is lower than that in InAs QDs/Si devices, corroborating with I–V results.

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Data availability

Data sets generated during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

M. Al Huwayz would like to acknowledge the support of “the National Plan for Sciences, Technology and Innovation (MAARIFAH)-King Abdulaziz City for Sciences and Technology (KACST)-Kingdom of Saudi Arabia Award Number: 14-NAN65-08. N. Al Saqri and Y. Al Saleh are thankful for the financial support by Sultan Qaboos University internal grant project IG/SCI/PHYS/20/01.

Author information

Authors and Affiliations

  1. Department of Physics, College of Sciences, Princess Nourah Bint Abdulrahman University (PNU), Riyadh, 11671, Saudi Arabia

    M. Al Huwayz & A. Almunyif

  2. School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK

    M. Al Huwayz, S. Alotaibi, S. Alhassan, A. Almalki, A. Alhassni, A. Almunyif & M. Henini

  3. Department of General Sciences, College of Basic Education, University of Zakho, Zakho, Kurdistan Region-Iraq, Iraq

    D. A. Jameel

  4. Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, Shaqra, 11911, Saudi Arabia

    S. Alotaibi

  5. Physics Department, College of Science, Jouf University, P. O. Box: 2014, Sakaka, 42421, Saudi Arabia

    S. Alhassan

  6. Physics Department, Faculty of Science at Taibah University-Yanbu, King Khalid Rd. Al Amoedi, 46423, Yanbu El-Bahr, 51000, Saudi Arabia

    A. Almalki

  7. Department of Physics, College of Science, Sultan Qaboos University, Muscat, Oman

    N. Al Saqri & Y. Al Saleh

  8. Department of Physics, Faculty of Science and Art in Al-Makhwah, Al-Baha University, Al Aqiq, 65779, Saudi Arabia

    A. Alhassni

  9. Department of Physics, College of Sciences, Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh, 11623, Saudi Arabia

    O. M. Lemine

  10. Qatar Environment and Energy Research Institute (QEERI), Hamad Bin Khalifa University, Qatar Foundation, P. O. Box 34110, Doha, Qatar

    A. Salhi

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  1. M. Al Huwayz
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  2. D. A. Jameel
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  3. S. Alotaibi
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  12. M. Henini
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Contributions

MAH: experimental design, carrying out measurements, and manuscript composition. DAJ, SA, SA, AA, NAS, YAlS, AA, and AA: manuscript composition. OML: manuscript composition. AS: MBE growth of samples and manuscript composition. MH: experimental design and manuscript composition.

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Correspondence to D. A. Jameel.

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Al Huwayz, M., Jameel, D.A., Alotaibi, S. et al. Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures. Appl. Phys. A 129, 405 (2023). https://doi.org/10.1007/s00339-023-06626-w

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