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Undoped p-type ZnTe thin film and thin film transistor channel performance

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Abstract

In this study, the p-type Zinc Telluride (ZnTe) thin films were deposited by RF magnetron sputtering technique on the patterned-ITO substrates. The RF-sputtered p-type ZnTe thin films having 201, 308, 362 and 457 nm thicknesses have been characterized before device fabrication. The SEM and XRD analysis showed that increasing film thickness has caused cluster-like growth and presence of ZnO grains, respectively. In addition, the EDS analysis has been used to determine the composition of Zn and Te. The EDS spectra showed that the ZnO grains may contribute to n-type conductivity as well as to p-type conductivity due to the oxygen-rich (ZnO:O) or tellurium-doped (ZnO:Te) structures. The thickness depends root mean sequence (RMS) values of the ZnTe films are 4.60 nm, 14.36 nm, 20.10 nm, and 27.95 nm, respectively. On the other hand, the threshold voltage (\({V}_{th})\), subthreshold current (\({I}_{off}\)), subthreshold slope (SS) and field effect mobility (\(\mu\)) of the p-type ZnTe thin film transistors (TFTs) have investigated depending on channel layer thickness. The increasing film thickness has caused decreasing performance parameters from 9.75 V, 6.20 × 10–10 A, 1.15 V/dec and 3,30 cm2V−1 s−1 to 2.50 V, 3.60 × 10–10 A, 0.72 V/dec and 1,68 cm2V−1 s−1, respectively. The film having 100 nm thickness has best saturation-current value.

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Acknowledgements

This study was funded by the Scientific and Technological Research Council of Turkey (TUBITAK) ARDEB 1001 (The Scientific and Technological Research Projects Funding Program) Grant No 119F032.

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Authors and Affiliations

  1. Department of Electricity and Energy, Technical Scientific Vocational School, Ardahan University, 75000, Ardahan, Turkey

    Ali Baltakesmez

  2. Department of Physics, Faculty of Sciences, Atatürk University, 25240, Erzurum, Turkey

    Betül Güzeldir

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  1. Ali Baltakesmez
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AB: data curation, conceptualization, methodology, investigation, writing—review and editing, original draft preparation BG: conceptualization, methodology, investigation, visualization, writing—review and editing.

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Correspondence to Betül Güzeldir.

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Baltakesmez, A., Güzeldir, B. Undoped p-type ZnTe thin film and thin film transistor channel performance. Appl. Phys. A 129, 134 (2023). https://doi.org/10.1007/s00339-023-06430-6

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