Abstract
Third-order nonlinear optical (NLO) properties of indium tin oxide (ITO) thin film were studied using high repetition rate (80 MHz), femtosecond (100 fs), and near-infrared (NIR) (750–820 nm) laser pulses. An ITO thin film was prepared using an RF magnetron sputtering system. The film thickness was determined using a scanning electron microscope (SEM), while the linear optical properties of the thin film were measured using a UV–Vis spectrophotometer. Nonlinear absorption (NLA) studies of ITO thin film using an open aperture Z-scan revealed a combination of nonlinear phenomena: reverse saturable absorption (RSA) and saturable absorption (SA). A saturation model has been used to explain the observed saturation of two-photon absorption (2PA) at high incident powers. The ITO film's NLA properties were found to be excitation power and wavelength dependent. The NLA coefficient was shown to be inversely proportional to the excitation power and wavelength. Furthermore, NLA measurements of ITO thin films show that the transition from RSA to RSA-SA-RSA switching behavior was influenced by ITO thickness. Because of their high third-order nonlinear optical responses, these ITO thin films are ideal candidates for photonic applications.
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This study was supported by a Science and Technology Development Fund (STDF) through the Basic Sciences Research Program (30147).
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Samad, F.A., Mohamed, T. Intensity and wavelength-dependent two-photon absorption and its saturation in ITO film. Appl. Phys. A 129, 31 (2023). https://doi.org/10.1007/s00339-022-06259-5
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DOI: https://doi.org/10.1007/s00339-022-06259-5