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Temperature-dependent time relaxation of ON and OFF states in NiO\(_{x}\)-based crossbar memory arrays

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Abstract

The time-dependence of ON and OFF switching states in Pt/NiO\(_{x}\)/Pt crossbar devices was measured between 300 K and 180 K. We find that the OFF-state resistance increases with time and this positive relaxation rate is reduced upon cooling, whereas the resistance decreases with time for the device in the ON state, and such negative relaxation rate increases with cooling and below 260 K, it becomes temperature independent. Furthermore, devices with a larger OFF/ON ratio and negligibly small relaxation rates at low temperatures may present great benefits for cryogenic memory applications. In this work, we discuss the mechanism behind these thermally and bias activated changes.

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Acknowledgements

This work was partially supported by the Natural Sciences and Engineering Research Council of Canada.

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Authors and Affiliations

  1. Department of Physics, University of Alberta, Edmonton, AB, T6G 2E1, Canada

    H. S. Alagoz, J. Jung & K. H. Chow

  2. Department of Physics, American University of Sharjah, PO Box 26666, Sharjah, United Arab Emirates

    M. Egilmez

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  1. H. S. Alagoz
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  2. M. Egilmez
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Alagoz, H.S., Egilmez, M., Jung, J. et al. Temperature-dependent time relaxation of ON and OFF states in NiO\(_{x}\)-based crossbar memory arrays. Appl. Phys. A 128, 1004 (2022). https://doi.org/10.1007/s00339-022-06120-9

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