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Bipolar interface-type resistive switching effect in the MoS2–xOx film

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Abstract

Resistance random access memories (RRAM) show excellent potential applications for nonvolatile data storage. Recently, one of the most representative materials is the MoS2–xOx fabricated by oxidation of the MoS2 flake. The resistive switching (RS) effect was observed in the graphene/MoS2–xOx/graphene device. This bulk-type RS device has a low Roff/Ron ratio. In addition, interface-type RS effect can be more attractive, which is not explored in MoS2–xOx devices yet. In this work, a bipolar interface-type RS effect is observed in Au/MoS2–xOx (MSO)/Au device for the first time. By inserting the Ti layer between top Au and MSO layers, a high stable bipolar interface-type RS effect is observed, and the Roff/Ron ratio is significantly increased by two orders of magnitude. The performance improvement can be understood by the redox reaction of the interface Ti/MSO. This work could provide a reference for improving the performance of RS devices.

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Funding

This work was supported by the National Natural Science Foundation of China (Grant Nos. 52001169, 61874060, U1932159, 61911530220, 12104238), Natural Science Foundation of Jiangsu Province (Grant No. 20KJB430010), NUPTSF (Grant Nos. NY219164, NY217118), the open Project of the laboratory of Solid-state Microstructures of Nanjing University (Grant No. M33038), Foundation of Jiangsu Provincial Double-Innovation Doctor Program (Grant No. CZ007SC20018), Jiangsu Specially Appointed Professor program, Natural Science Foundation of Jiangsu Province (Grant Nos. BK20181388, 19KJA180007), Oversea Researcher Innovation Program of Nanjing, Innovation Project of Jiangsu Province (Grant Nos. KYCX20_0791, KYCX21_0697).

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Authors and Affiliations

  1. New Energy Technology Engineering Laboratory of Jiangsu Provence and School of Science, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210046, People’s Republic of China

    Xinyu Xu, Xiaomiao Yin, Lina Chen, Feng Li, Jiaju Yang, Zhenqi Wu, Wei Niu, Lujun Wei, Yanfeng Lv & Yong Pu

  2. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, People’s Republic of China

    Lujun Wei

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  1. Xinyu Xu
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  2. Xiaomiao Yin
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Correspondence to Lujun Wei, Yanfeng Lv or Yong Pu.

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Xu, X., Yin, X., Chen, L. et al. Bipolar interface-type resistive switching effect in the MoS2–xOx film. Appl. Phys. A 128, 623 (2022). https://doi.org/10.1007/s00339-022-05756-x

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