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Characterization of phase, structure, and photoelectric properties of CISSe film and CISSe/CdS heterojunctions

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Abstract

CuInS2-xSex (CISSe) thin films were prepared using mixed-source vacuum co-evaporation method, and then annealed at 400 °C for 30 min in N2 gas and Se vapor, respectively. Raman spectra and XRD curves showed that phase compositions of CISSe films would change with variations of Se content and annealing conditions. SEM observations showed that Se content and annealing environment could seriously affect surface morphologies. I–V characteristic curves and UV–vis spectra showed that CuInS1.8Se0.2 film exhibited preferable optical–electrical properties. For CdS/CuInS1.8Se0.2 NP junction, carrier transportation was controlled by recombination mechanism in space charge region and the photocurrent was relatively stable which meant less crystal defects and impurity phase.

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Acknowledgements

Authors thank Dr Jianguo Fan from II–VI Inc. 141 Mt. Bethel Rd, Warren NJ 07059 for the help on analysis of experimental results and correction of grammatical errors.

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  1. School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, People’s Republic of China

    Ming Ying, Junjie Wen, Fan Zhang & Yue Zhao

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  1. Ming Ying
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Correspondence to Yue Zhao.

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Ying, M., Wen, J., Zhang, F. et al. Characterization of phase, structure, and photoelectric properties of CISSe film and CISSe/CdS heterojunctions. Appl. Phys. A 128, 349 (2022). https://doi.org/10.1007/s00339-022-05478-0

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  • DOI: https://doi.org/10.1007/s00339-022-05478-0

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