Abstract
We report on fabrication of tellurium nanostructures (TN) that demonstrated promising applications in optoelectronics. Initially, TN were synthesized using a simple, one-step, room temperature, wet-chemical technique. During synthesis, the effect of number of parameters such as precursor concentration, its content, solvent ratios, their pH and reaction time has been investigated at a temperature ~ 120 °C. The obtained product was examined by UV–visible, IR spectroscopy, X-ray diffractometry, electron microscopy and energy-dispersive X-ray spectroscopic characterization techniques. Analysis revealed that TN have profound impact on the structure–property relationship through active and passive participation of Mo catalyst. During its initial growth stages, Te and O bonding gets influenced by Mo to form Mo–O–Te–O and Te–Mo–Te moieties, typically, at 6 h. This has implication onto the structural phase transformation of TN from Te-tube (TT) to Te-flake (TF) and then to TT again. Possible transformation mechanism is explained. Structurally, TN had hexagonal quasi-crystalline atomic arrangement with morphologically thin, transparent, bunched and close-caped TT characteristics having diameter 50–100 nm and length 0.8–2.1 µm, whereas TF is found to be thin, geometrically squared with area ~ 7 to 10 µm2. On their implementation for optoelectronic assessments, over the wavelength range 0.3–2.1 µm (power density ~ 100 mW/cm2), they showed peculiar luminescent and dark I–V responses. Relevant photocarrier dynamics has been revealed. TT, typically, showed 160% quantum efficiency, whereas TF ~ 40% is useful for optoelectronic devices. Details are presented.
Graphical abstract
Fabrication and optoelectronic assessments of tellurium nanostructure that showed time-dependent structural phase transformation from tube to flake to tube.
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Acknowledgements
Authors are thankful to Prof. (Dr.) Raghavendra P. Tiwari, Vice-chancellor, and Prof. (Dr.) Rama Krishna Wusrika, Dean Academics, CU Punjab, Bathinda. PR and PA are thankful to Nilesh G. Saykar for helping in recording I–V data. Author Pinki Rani also thanks to University grant commission, India, for providing the JRF fellowship.
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Rani, P., Alegaonkar, A.P., Mahapatra, S.K. et al. Tellurium nanostructures for optoelectronic applications. Appl. Phys. A 128, 346 (2022). https://doi.org/10.1007/s00339-022-05405-3
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DOI: https://doi.org/10.1007/s00339-022-05405-3