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Influence of h-BN on electronic properties of GeS/InSe heterojunction

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Abstract

Constructing van der Waals heterojunctions can enhance two-dimensional (2D) materials with desired properties and greatly extend the applications of the original materials. Here, we implement hexagonal boron nitride (h-BN) layers in between a GeS/InSe heterojunction. We construct three types of heterojunctions GeS/InSe, GeS/h-BN/InSe and GeS/TB (two layers of h-BN)/InSe. It can be seen that the insertion of h-BN causes the increase of the bandgap of the heterojunctions. The bandgaps of GeS/InSe, GeS/h-BN/InSe and GeS/TB/InSe are 0.35, 0.37 and 0.51 eV, respectively. Furthermore, the external electric field can modulate the electronic structure of heterojunctions, consequently the bandgaps. The h-BN layers suppress the interlayer coupling and effectively separates the charges. Inserting h-BN reduces the absorption coefficient of the heterojunctions, but the external electric field can effectively improve the absorption coefficients of GeS/h-BN/InSe and GeS/TB/InSe heterojunctions. Therefore, our proposed method of using the two-dimensional insulator h-BN to modulate the physical properties of the heterojunction provides a useful way for the development of high-performance optoelectronic devices in the future.

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Acknowledgements

This work is supported by National Natural Science Foundation Joint Fund Key Project under Grant No. U1865206, National Science and Technology Major Project under Grant No. 2017- VII-0012-0107, Guangdong Province Key Area R&D Program under Grant No. 2019B090909002.

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Authors and Affiliations

  1. School of Science, Jiangnan University, Wuxi, 214122, China

    Jinghua Pan, Sicheng Jing, Wen Chen, Wei Li & Baoan Bian

  2. College of Nuclear Science and Technology, Beijing Normal University, Beijing, 100875, China

    Bin Liao

  3. Guangdong Guangxin Ion Beam Technology Co., Ltd, Guangzhou, 510000, China

    Guoliang Wang

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  1. Jinghua Pan
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  2. Sicheng Jing
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  3. Wen Chen
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Correspondence to Baoan Bian.

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Pan, J., Jing, S., Chen, W. et al. Influence of h-BN on electronic properties of GeS/InSe heterojunction. Appl. Phys. A 128, 141 (2022). https://doi.org/10.1007/s00339-022-05283-9

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