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Investigations on rGO on silicon-based UV photon detector

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Abstract

The possibility of using reduced graphene oxide field effect transistor (rGOFET) on a high resistivity silicon as a photon detector in bottom gate FET architecture has been explored in this work. Highly conductive reduced graphene oxide (rGO) is synthesized from graphene oxide (GO) by a hybrid technique using hydroiodic acid (HI) fumes and thermal annealing for 6 h on the substrate itself. The rGOFET device is irradiated from top and bottom at different gate-source voltages ranging between 50 mV and 5 V and a comparison of its performance is done. The fabricated device has shown significant response to photons in the UV range peaking at 256 nm with a responsivity of 0.15 A/W at 5 V when irradiated from top and 0.095 A/W at 5 V when irradiated from bottom. The response time of the device measured is 0.23 s, and recovery time is 0.12 s.

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Acknowledgements

The authors would like to thank Indian Space Research Organization (ISRO), Govt. of India for funding this research work through RESPOND grant. They would also like to thank Centre for Nano Science and Engineering, Indian Institute of Science for the material characterization.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Dayananda Sagar University, Bangalore, India

    G. Anshika, G. Shruthi & K. Saara

  2. Department of Physics, School of Engineering, Dayananda Sagar University, Bangalore, India

    G. Baishali

  3. Space Astronomy Group, U R Rao Satellite Centre, ISRO, Bangalore, India

    V. Radhakrishna

  4. Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, India

    S. Vijay

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  1. G. Anshika
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Anshika, G., Shruthi, G., Baishali, G. et al. Investigations on rGO on silicon-based UV photon detector. Appl. Phys. A 127, 863 (2021). https://doi.org/10.1007/s00339-021-04986-9

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