Abstract
The emitter is one of the most crucial issues to achieve high-performance silicon heterojunction (SHJ) solar cells. In this work, we study the effects of single-layer and multi-layer p-type emitters, including boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) and/or boron-doped hydrogenated nanocrystalline silicon oxide (nc-SiOX:H) films, on the device performance of SHJ solar cells. The results demonstrate that the sandwich-like p-type emitters of p-nc-Si:H/p-nc-SiOX:H/p+-nc-Si:H have the potential to become an effective and efficient candidate to result in higher efficiency. The lightly boron-doped p-nc-Si:H is used to reduce the incubation layer thickness in the initial stage of growth, while the low parasitic absorption of the p-nc-SiOX:H emitter leads to an increase in short-circuit current. Moreover, a highly boron-doped p+-nc-Si:H layer is implemented on top of the p-nc-SiOX:H to get a lower series resistance (Rs) and higher fill factor. Lastly, we achieve a champion SHJ solar cell on planar wafer with an open-circuit voltage of 678.2 mV, a short-circuit current density of 36.6 mA/cm2, a fill factor of 77% and a conversion efficiency of 19.11%.Kindly check and confirm the ON for the affiliation 1 and 2.We confirm the accuracy of the affiliations.
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Acknowledgements
This work was financially supported by the National Key R&D Program of China (Grant No. 2018YFB1500402), The National Natural Science Foundation of China (No. 62074084).
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Zhou, J., Zhang, B., Chen, J. et al. Performance improvement of planar silicon heterojunction solar cells via sandwich-like p-type emitters. Appl. Phys. A 127, 735 (2021). https://doi.org/10.1007/s00339-021-04883-1
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DOI: https://doi.org/10.1007/s00339-021-04883-1