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Simulation design and performance study of Graphene/Mg2Si/Si heterojunction photodetector

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Abstract

In this work, we have reported the structural model of Graphene/Mg2Si/Si heterojunction photodetector and its photoelectric performance parameters such as breakdown voltage, forward conduction voltage, spectral response, responsivity, noise equivalent power, detection degree, and on/off ratio. The simulated data of Graphene/Mg2Si/Si heterojunction photodetectors show the breakdown voltage of 22.41 V, and the forward conduction voltage of 4.81 V. It is found that our designed photodetector shows excellent performance at incident light of 685 nm. In this case, maximum responsivity, maximum detection, and maximum switching ratio are 0.96 A/W, 4.96 × 1011 Jones, 4.9 × 103, respectively. Furthermore, the minimum noise equivalent power of our designed photodetector is 2.02 × 10−12 WHz1/2. Comparative analysis of the data of Graphene/Mg2Si/Si heterojunction photodetector with that of Mg2Si/Si photodetector led us to conclude that our designed photodetector has improved performance.

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References

  1. H. Yu, Y.E. Luo, X.W. Wang, Y. He, L. Xu, Effects of La doping on Mg2Si semiconductor thin films prepared by thermal evaporation. Mater. Res. Express 6, 026301 (2019)

    Article  ADS  Google Scholar 

  2. A.A.M. El-Amir, T. Ohsawa, Y. Matsushita, Y. Wada, K. Shimamura, N. Ohashi, Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode. AIP Adv. 8, 115005 (2018)

    Article  ADS  Google Scholar 

  3. A.A.M. El-Amir, T. Ohsawa, T. Nabatame, A. Ohi, Y. Wada, M. Nakamura, X.W. Fu, K. Shimamura, N. Ohashi, Ecofriendly Mg2Si-based photodiode for short-wavelength IR sensing. Mater. Sci. Semicond. Proc. 91, 222–229 (2019)

    Article  Google Scholar 

  4. X.H. An, F. Liu, Y.J. Jung, S. Kar, Tunable Grapheme–Silicon heterojunctions for ultrasensitive photodetection. Nano Lett. 13, 909–916 (2013)

    Article  ADS  Google Scholar 

  5. L.H. Zeng, M.Z. Wang, H. Hu, B. Nie, Y.Q. Yu, C.Y. Wu, L. Wang, J.G. Hu, C. Xie, F.X. Liang, Monolayer Graphene/Germanium Schottky junction as high-performance self-driven infrared light photodetector. Acs Appl. Mater. Interfaces 5, 9362–9366 (2013)

    Article  Google Scholar 

  6. B. Nie, J.G. Hu, L.B. Luo, C. Xie, L.H. Zeng, P. Lv, F.Z. Li, J.S. Jie, M. Feng, C.Y. Wu, Y.Q. Yu, S.H. Yu, Monolayer Graphene film on ZnO nanorod array for high-performance Schottky junction ultraviolet photodetectors. Small 9, 2872–2879 (2013)

    Article  Google Scholar 

  7. A.V. Babichev, H. Zhang, P. Lavenus, F.H. Julien, GaN nanowire ultraviolet photodetector with a Graphene transparent contact. Appl. Phys. Lett. 103, 201103–201103-4 (2013)

    Article  ADS  Google Scholar 

  8. L.B. Luo, J.J. Chen, M.Z. Wang, H. Hu, C.Y. Wu, Q. Li, L. Wang, J.A. Huang, F.X. Liang, Near-infrared light photovoltaic detector based on GaAs nanocone array/monolayer Graphene Schottky junction. Adv. Funct. Mater. 24, 2794–2800 (2014)

    Article  Google Scholar 

  9. Q. Bao, K.P. Loh, Graphene photonics, plasmonics, and broadband optoelectronic devices. ACS Nano 6, 3677–3694 (2012)

    Article  Google Scholar 

  10. Q.Q. Xiao, Q. Xie, X.Q. Shen, J.M. Zhang, Z.Q. Yu, K.J. Zhao, Effect of magnesium film thickness and annealing temperature on formation of Mg2Si films on Silicon (111) substrate deposited by magnetron sputtering. Appl. Surf. Sci. 257, 7800–7804 (2011)

    Article  ADS  Google Scholar 

  11. H. Yu, Q. Xie, Q. Chen, Effects of annealing on the formation of Mg2Si film prepared by resistive thermal evaporation method. J. Mater. Sci. Mater. Electron. 24, 3768–3775 (2013)

    Article  Google Scholar 

  12. Y.F. Liao, Q. Xie, Q.Q. Xiao, Q. Chen, M.H. Fan, J. Xie, J. Huang, J.J. Zhang, R. Ma, S.L. Wang, H.X. Wu, D. Fang, Photoluminescence of Mg2Si films fabricated by magnetron sputtering. Appl. Surf. Sci. 403, 302–307 (2016)

    Article  ADS  Google Scholar 

  13. T. Kato, Y. Sago, H. Fujiwara, Optoelectronic properties of Mg2Si semiconducting layers with high absorption coefficients. J. Appl. Phys. 110, 063723−063723-5 (2011)

    Article  ADS  Google Scholar 

  14. Q. Deng, Z. Wang, S. Wang, G. Shao, Simulation of planar Si/ Mg2Si/Si p–i–n heterojunction solar cells for high efficiency. Sol. Energy 158, 654–662 (2017)

    Article  ADS  Google Scholar 

  15. B. Hafsi, A. Boubaker, N. Ismaïl, A. Kalboussi, K. Lmimouni, TCAD Simulations of Graphene field-effect transistors based on the quantum capacitance effect. J. Korean Phys. Soc. 67, 1201–1207 (2015)

    Article  ADS  Google Scholar 

  16. M.A. Yamoah, W.M. Yang, E. Po, D. Goldhaber-Gordon, High-velocity saturation in graphene encapsulated by hexagonal boron nitride. ACS Nano 11, 9914–9919 (2017)

    Article  Google Scholar 

  17. K.S. Novoselov, V.I. Fal’ko, L. Colombo, P.R. Gellert, M.G. Schwab, K. Kim, A roadmap for Grapheme. Nature 490, 192–200 (2012)

    Article  ADS  Google Scholar 

  18. S. Kim, J. Ihm, H.J. Choi, Y.W. Son, Origin of anomalous electronic structures of epitaxial Graphene on silicon carbide. Phys. Rev. Lett. 100, 176802–176802-4 (2008)

    Article  ADS  Google Scholar 

  19. F. Bonaccorso, L. Colombo, G. Yu, M.S. Toller, V. Tozzini, A.C. Ferrari, R.S. Ruoff, V. Pellegrini, Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage. Science 347, 1246501–1246501-9 (2015)

    Article  Google Scholar 

  20. V. Singh, D. Joung, L. Zhai, S. Das, S.I. Khondaker, S. Seal, Graphene based materials: past, present and future. Prog. Mater. Sci. 56, 1178–1271 (2011)

    Article  Google Scholar 

  21. Q. Feng, G.S. Yan, Z.Z. Hu, Z.Q. Feng, X.S. Tian, D. Jiao, W.X. Mu, Z.T. Jia, X.Z. Lian, Z.P. Lai, C.F. Zhang, H. Zhou, J.C. Zhang, Y. Hao, Forward current conduction mechanism of mechanically exfoliated β-Ga2O3/GaN pn heterojunction diode. ECS J. Solid State Sci. Technol. 9, 035001 (2020)

    Article  ADS  Google Scholar 

  22. M. Amirmazlaghani, F. Raissi, O. Habibpour, J. Vukusic, J. Stake, Graphene–Si Schottky IR detector. IEEE J. Quantum Electron. 49, 589–594 (2013)

    Article  ADS  Google Scholar 

  23. J.H. Chang, W.H. Lin, P.C. Wang, J.I. Taur, T.A. Ku, W.T. Chen, S.J. Yan, C.I. Wu, Solution-processed transparent blue organic light-emitting diodes with Graphene as the top cathode. Sci. Rep. 5, 9693–9693-5 (2015)

    Article  Google Scholar 

  24. M. Zhu, X.M. Li, S.K. Chung, L.Y. Zhao, X. Li, X.B. Zang, K.L. Wang, J.Q. Wei, M.L. Zhong, K. Zhou, D. Xie, H.W. Zhu, Photo-induced selective gas detection based on reduced Graphene oxide/Si Schottky diode. Carbon 84, 138–145 (2015)

    Article  Google Scholar 

  25. C. Xie, L.H. Zeng, Z.X. Zhang, Y.H. Tsang, L.B. Luo, J.H. Lee, High-performance broadband heterojunction photodetectors based on multilayered PtSe2 directly grown on Si substrate. Nanoscale 10, 15285–15293 (2018)

    Article  Google Scholar 

  26. L. Wang, J.J. Li, Q. Fan, Z.F. Huang, Y.C. Lu, C. Xie, C.Y. Wu, L.B. Luo, A high-performance near-infrared light photovoltaic detector based on multilayered PtSe2/Ge heterojunction. J. Mater. Chem. C 7, 5019–5027 (2019)

    Article  Google Scholar 

  27. J.X. Xu, H.B. Zhang, Z.L. Song, Y.C. Xu, Q.Q. Peng, X.W. Xiu, Z. Li, C.H. Li, M. Liu, B.Y. Man, SnS2/Si vertical heterostructure for high-performance photodetection with large photocurrent and fast speed. Appl. Surf. Sci. 506, 144671 (2020)

    Article  Google Scholar 

  28. J.J. Wellington, V. Dhyani, S. Maity, S. Mukherjee, S.K. Ray, V. Kumar, S. Das, Broadband infrared photodetector based on nanostructured MoSe2/Si heterojunction extended up to 2.5 m spectral range. Nanotechnology 31, 455208 (2020)

    Article  Google Scholar 

  29. N. Flöry, P. Ma, Y. Salamin, A. Emboras, T. Taniguchi, K. Watanabe, J. Leuthold, L. Novotny, Waveguide-integrated van der Waals heterostructure photodetector at telecom wavelengths with high speed and high responsivity. Nat. Nanotechnol. 15, 118–124 (2020)

    Article  ADS  Google Scholar 

  30. I. Goykhman, U. Sassi, B. Desiatov, N. Mazurski, S. Milana, D. de Fazio, A. Eiden, J. Khurgin, J. Shappir, U. Levy, A.C. Ferrari, On chip integrated, Silicon–Graphene plasmonic Schottky photodetector with high responsivity and avalanche photogain. Nano Lett. 16, 3005–3013 (2016)

    Article  ADS  Google Scholar 

  31. Y. Song, X.M. Li, C. Mackin, X. Zhang, W.J. Fang, T. Palacios, H.W. Zhu, J. Kong, Role of interfacial oxide in high-efficiency Graphene–Silicon Schottky barrier solar cells. Nano Lett. 15, 2104–2110 (2015)

    Article  ADS  Google Scholar 

  32. X.M. Li, M. Zhu, M.D. Du, Z. Lv, L. Zhang, Y.C. Li, Y. Yang, T.T. Yang, X. Li, K.L. Wang, H.W. Zhu, Y. Fang, High detectivity Grapheme–Silicon heterojunction photodetector. Small 12, 595–601 (2016)

    Article  Google Scholar 

  33. C.X. Wang, Y. Dong, Z.J. Lua, S.R. Chen, K.W. Xua, Y.M. Ma, G.B. Xu, X.Y. Zhao, Y.Q. Yu, High responsivity and high-speed 1.55 μm infrared photodetector from self-powered Graphene/Si heterojunction. Sensors Actuat. A Phys. 291, 87–92 (2019)

    Article  Google Scholar 

  34. X.X. Li, T. Sun, K. Zhou, X. Hong, X.Y. Tang, D.C. Wei, W.L. Feng, J. Shen, D.P. Wei, Broadband InSb/Si heterojunction photodetector with Graphene transparent electrode. Nanotechnology 31, 315204 (2020)

    Article  Google Scholar 

  35. J.F. Rodriguez-Nieva, M.S. Dresselhaus, J.C.W. Song, Enhanced ther, ionic-do, imated photoresponse in Graphene schottky junctions. Nano Lett. 16, 6036–6041 (2016)

    Article  ADS  Google Scholar 

  36. Y. Shi, W. Fang, K. Zhang, W. Zhang, L.J. Li, Photoelectrical response in single-layer Graphene transistors. Small 5, 2005–2011 (2009)

    Article  Google Scholar 

  37. J. Han, J. Wang, M. Yang, X. Kong, X. Chen, Z. Huang, H. Guo, J. Gou, S. Tao, Z. Liu, Z. Wu, Y. Jiang, X. Wang, Graphene/Organic semiconductor heterojunction phototransistors with broad-band and Bi directional photoresponse. Adv. Mater. 30, 1804020 (2018)

    Article  Google Scholar 

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Acknowledgements

Project supported by the National Natural Science Foundation of China (Grant No. 61264004), High-level Creative Talent Training Program in Guizhou Province of China (Grant No. [2015]4015), the Science and Technology Foundation of Guizhou Province, China (No. QKHJC [2020]1Y272), the Growth Foundation for Young Scientists of Education Department of Guizhou Province, China (QJHKY [2018]256).

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Yu, H., Shu, S., Xiong, X. et al. Simulation design and performance study of Graphene/Mg2Si/Si heterojunction photodetector. Appl. Phys. A 127, 548 (2021). https://doi.org/10.1007/s00339-021-04705-4

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