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Low-bias resistive switching in BaTiO3/Al2O3/ITO structures with various thicknesses of Al2O3 layer

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Abstract

The resistive switching behavior is observed in the BaTiO3/Al2O3/ITO structures, which has been deposited by magnetron sputtering. With the increase in thicknesses of Al2O3 layer, the RS behaviors become weak gradually in  \(\pm \hspace{0.17em}\)0.75 V sweep bias voltage. Non-volatile multilevel RS behavior is observed in the BaTiO3/Al2O3/ITO device with thickness of Al2O3 layer with 30 nm. The BaTiO3/Al2O3/ITO device with thickness of 30 nm of Al2O3 layer presents low Set voltage and Reset voltage, where Set voltage is 0.48–0.75 V and Reset voltage is − 0.54 to − 0.3 V.

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Authors and Affiliations

  1. School of Physics Science and Technology, Southwest University, Chongqing, 400715, China

    Chaotao He, Yu Lu, Yuanyuan Tang, Xiulin Li & Peng Chen

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  1. Chaotao He
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  2. Yu Lu
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  3. Yuanyuan Tang
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  4. Xiulin Li
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  5. Peng Chen
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Correspondence to Peng Chen.

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He, C., Lu, Y., Tang, Y. et al. Low-bias resistive switching in BaTiO3/Al2O3/ITO structures with various thicknesses of Al2O3 layer. Appl. Phys. A 127, 484 (2021). https://doi.org/10.1007/s00339-021-04624-4

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  • DOI: https://doi.org/10.1007/s00339-021-04624-4

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