Skip to main content
SpringerLink
Log in

The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) of various sizes were fabricated, and their parasitic source resistance (RS) was measured. The measurement results showed that RS varied greatly with changing gate bias, and the degree of RS change also differed with the gate bias of different-sized device samples. Through theoretical analysis, it is found that polarization Coulomb field (PCF) scattering caused by the device process and gate bias can affect electron mobility (\(\mu_{GS}\)) in the gate-source region, which causes the variations in \(\mu_{GS}\) for different-sized devices and same-sized devices under different gate biases. When \(\mu_{GS}\) changes with the device size and gate bias, the RS will change accordingly. Our study is the first to discover the gate bias dependency of RS for E-mode P-GaN/AlGaN/GaN HFETs due to PCF scattering, which provides a new idea for further in-depth studies on the RS of E-mode P-GaN/AlGaN/GaN HFETs and device performance optimization.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

References

  1. A. Dokouzis, F. Bella, K. Theodosiou, C. Gerbaldi, G. Leftheriotis, Mater. Today Energ. 15, 100365 (2020)

    Article  Google Scholar 

  2. L. Cai, S. Zhu, G. Wu, F. Jiao, W. Li, X. Wang, Y. An, Y. Hu, J. Sun, X. Dong, J. Wang, Q. Lu, Q. Jing, B. Liu, Int. J. Hydrog. Energ. 45(55), 31327 (2020)

    Article  Google Scholar 

  3. A. Massaro, A.B. Muñoz-García, P. Maddalena, F. Bella, G. Meligrana, C. Gerbaldi, M. Pavone, Nanoscale Adv. 2(7), 2745 (2020)

    Article  ADS  Google Scholar 

  4. A. Chhetry, S. Sharma, S.C. Barman, H. Yoon, S. Ko, C. Park, S. Yoon, H. Kim, J.Y. Park, Adv. Func. Mater. 31(10), 2007661 (2021)

    Article  Google Scholar 

  5. C. Baiano, E. Schiavo, C. Gerbaldi, F. Bella, G. Meligrana, G. Talarico, P. Maddalena, M. Pavone, A.B. Muñoz-García, Mol. Catal. 496, 111181 (2020)

    Article  Google Scholar 

  6. L. Fagiolari, M. Bonomo, A. Cognetti, G. Meligrana, C. Gerbaldi, C. Barolo, F. Bella, Chemsuschem 13(24), 6562 (2020)

    Article  Google Scholar 

  7. K. Song, H. Zhang, H. Fu, C. Yang, R. Singh, Y. Zhao, H. Sun, S. Long, J. Phys. D Appl. Phys. 53(34), 345107 (2020)

    Article  Google Scholar 

  8. X. Li, L.A. Yang, X. Zhang, X. Ma, Y. Hao, Appl. Phys. A 125(3), 205 (2019)

    Article  ADS  Google Scholar 

  9. Ö. Akpınar, A.K. Bilgili, M.K. Öztürk, S. Özçelik, Appl. Phys. A 126(8), 623 (2020)

    Article  ADS  Google Scholar 

  10. N. Tipirneni, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, M.A. Khan, IEEE Electron Device Lett. 27(9), 716–718 (2006)

    Article  ADS  Google Scholar 

  11. H. Tokuda, J.T. Asubar, M. Kuzuhara, Jpn. J. Appl. Phys. 59(8), 084002 (2020)

    Article  ADS  Google Scholar 

  12. F. Wang, W. Chen, X. Li, R. Sun, X. Xu, Y. Xin, Z. Wang, Y. Shi, Y. Xia, C. Liu, J. Zhou, Q. Zhou, B. Zhang, J. Phys. D Appl. Phys. 53(30), 305106 (2020)

    Article  Google Scholar 

  13. A. Lidow, J. Strydom, M. de Rooij, D. Reusch, GaN Transistors for Efficient Power Conversion, 2nd edn. (Wiley, United Kingdom, 2015).

    Google Scholar 

  14. V. Kumar, A. Kuliev, T. Tanaka, Y. Otoki, I. Adesida, Electron. Lett. 39(24), 1758 (2003)

    Article  ADS  Google Scholar 

  15. Y. Cai, Y. Zhou, K.M. Lau, K.J. Chen, IEEE Trans. Electron Devices 53(9), 2207–2215 (2006)

    Article  ADS  Google Scholar 

  16. Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka, D. Ueda, IEEE Trans. Electron Devices 54(12), 3393–3399 (2007)

    Article  ADS  Google Scholar 

  17. F. Roccaforte, G. Greco, P. Fiorenza, F. Iucolano, Materials 12(10), 1599 (2019)

    Article  ADS  Google Scholar 

  18. G. Greco, F. Iucolano, F. Roccaforte, Mater. Sci. Semicond. Process. 78, 96–106 (2018)

    Article  Google Scholar 

  19. J. Wei, R. Xie, H. Xu, H. Wang, Y. Wang, M. Hua, K. Zhong, G. Tang, J. He, M. Zhang, K.J. Chen, IEEE Electron Device Lett. 40(4), 526–529 (2019)

    Article  ADS  Google Scholar 

  20. N. Modolo, S. W. Tang, H. J. Jiang, C. De Santi, M. Meneghini and T. L. Wu, IEEE Trans Electron Devices. 68(4), 1489 (2021)

    Article  ADS  Google Scholar 

  21. J. He, J. Wei, Y. Li, Z. Zheng, S. Yang, B. Huang, K.J. Chen, Appl. Phys. Lett. 116(22), 223502 (2020)

    Article  ADS  Google Scholar 

  22. L. Hsu, W. Walukiewicz, Phys. Rev. B 56(3), 1520–1528 (1997)

    Article  ADS  Google Scholar 

  23. J. Antoszewski, M. Gracey, J.M. Dell, L. Faraone, T.A. Fisher, G. Parish, Y.F. Wu, U.K. Mishra, J. Appl. Phys. 87(8), 3900–3904 (2000)

    Article  ADS  Google Scholar 

  24. G. Jiang, Y. Lv, Z. Lin, Y. Yang, Y. Liu, Phys. E Low-dimensional Syst. Nanostruct. 127, 114576 (2020)

    Article  Google Scholar 

  25. J. Zhao, Z. Lin, T.D. Corrigan, Z. Wang, Z. You, Z. Wang, Appl. Phys. Lett. 91(17), 173507 (2007)

    Article  ADS  Google Scholar 

  26. Y. Lv, Z. Lin, Y. Zhang, L. Meng, C. Luan, Z. Cao, H. Chen, Z. Wang, Appl. Phys. Lett. 98(12), 123512 (2011)

    Article  ADS  Google Scholar 

  27. M. Yang, Z. Lin, J. Zhao, P. Cui, C. Fu, Y. Lv, Z. Feng, IEEE Trans. Electron Devices 63(4), 1471–1477 (2016)

    Article  ADS  Google Scholar 

  28. C. Luan, Z. Lin, Y. Lv, L. Meng, Y. Yu, Z. Cao, H. Chen, Z. Wang, Appl. Phys. Lett. 101(11), 113501 (2012)

    Article  ADS  Google Scholar 

  29. P. Cui, Z. Lin, C. Fu, Y. Liu, Y. Lv, Appl. Phys. A 124(5), 359 (2018)

    Article  Google Scholar 

  30. J. Zhao, Z. Lin, C. Luan, Y. Zhou, M. Yang, Y. Lv, Z. Feng, Appl. Phys. Lett. 105(8), 083501 (2014)

    Article  ADS  Google Scholar 

  31. J. Zhao, Z. Lin, Q. Chen, M. Yang, P. Cui, Y. Lv, Z. Feng, Appl. Phys. Lett. 107(11), 113502 (2015)

    Article  ADS  Google Scholar 

  32. R. Hao, K. Fu, G. Yu, W. Li, J. Yuan, L. Song, Z. Zhang, S. Sun, X. Li, Y. Cai, X. Zhang, B. Zhang, Appl. Phys. Lett. 109(15), 152106 (2016)

    Article  ADS  Google Scholar 

  33. Y. Huang, L. Zhang, Z. Cheng, Y. Zhang, Y. Ai, Y. Zhao, H. Lu, J. Wang, J. Li, J. Semicond. 37(11), 114002 (2016)

    Article  Google Scholar 

  34. R.P. Holmstrom, W.L. Bloss, J.Y. Chi, IEEE Electron Device Lett. 7(7), 410 (1986)

    Article  ADS  Google Scholar 

  35. P. Cui, H. Liu, W. Lin, Z. Lin, A. Cheng, M. Yang, Y. Liu, C. Fu, Y. Lv, C. Luan, IEEE Trans. Electron Devices 64(3), 1038–1044 (2017)

    Article  ADS  Google Scholar 

  36. P. Cui, Z. Lin, C. Fu, Y. Liu, Y. Lv, Superlattices Microstruct. 110, 289–295 (2017)

    Article  ADS  Google Scholar 

  37. G. Jiang, Y. Lv, Z. Lin, Y. Yang, Y. Liu, S. Guo, Y. Zhou, AIP Adv. 10(7), 075212 (2020)

    Article  ADS  Google Scholar 

  38. C. Luan, Z. Lin, Y. Lv, J. Zhao, Y. Wang, H. Chen, Z. Wang, J. Appl. Phys. 116(4), 044507 (2014)

    Article  ADS  Google Scholar 

  39. M.S. Kumara, R. Kesavamoorthy, J. Kumara, Mater. Sci. Semicond. Process. 4(6), 585–589 (2001)

    Article  Google Scholar 

  40. J. Neugebauer, C.G. Van de Walle, Phys. Rev. Lett. 75(24), 4452–4455 (1995)

    Article  ADS  Google Scholar 

  41. T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, K. Manabe, J. Appl. Phys. 77(9), 4389–4392 (1995)

    Article  ADS  Google Scholar 

  42. A.F.M. Anwar, R.T. Webster, K.V. Smith, Appl. Phys. Lett. 88(20), 203510 (2006)

    Article  ADS  Google Scholar 

  43. Y. Lv, Z. Lin, L. Meng, C. Luan, Z. Cao, Y. Yu, Z. Feng, Z. Wang, Nanoscale Res. Lett. 7, 434 (2012)

    Article  ADS  Google Scholar 

Download references

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11974210 and 11574182).

Author information

Authors and Affiliations

  1. School of Microelectronics, Institute of Novel Semiconductors, Shandong University, Jinan, 250101, China

    Guangyuan Jiang, Zhaojun Lin, Yang Liu & Yan Zhou

  2. College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China

    Yan Liu

  3. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou, 215123, China

    Guohao Yu & Baoshun Zhang

  4. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China

    Yuanjie Lv

Authors
  1. Guangyuan Jiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yan Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Zhaojun Lin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Guohao Yu
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Baoshun Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Yuanjie Lv
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Yang Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Yan Zhou
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to Zhaojun Lin or Guohao Yu.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Jiang, G., Liu, Y., Lin, Z. et al. The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors. Appl. Phys. A 127, 458 (2021). https://doi.org/10.1007/s00339-021-04596-5

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s00339-021-04596-5

Keywords

Search

Navigation