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Characteristics of current injection in the narrow-band p-CuTlS single crystal

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Abstract

The volt-amperage characteristics (VAC) and electrical conductivity of p-CuTlS single crystal have been investigated in a wide range of electric fields at 100 ÷ 300 K temperature range. It has been determined that in a narrow-band (Eg = 0.32 eV) CuTlS crystal, the current in an electric field of 10 < E < 40 V/cm and at low temperatures (100 ÷ 200 K) is limited by volume charge density injected from the contact,while in the areas of E > 40 V/cm, an increase in current is observed in consequence of ionization of local levels.

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Authors and Affiliations

  1. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, B. Vagabzadeh street 9, AZ 1143, Baku, Azerbaijan

    R. S. Madatov & R. M. Mamishova

  2. National Aviation Academy, Bina, 25th km, AZ 1045, Baku, Azerbaijan

    R. S. Madatov

  3. Ganja State University, Prospect G. Aliyev 425, Ganja, Azerbaijan

    G. B. Baylarov

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  1. R. S. Madatov
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  2. R. M. Mamishova
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  3. G. B. Baylarov
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Correspondence to R. M. Mamishova.

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Madatov, R.S., Mamishova, R.M. & Baylarov, G.B. Characteristics of current injection in the narrow-band p-CuTlS single crystal. Appl. Phys. A 127, 364 (2021). https://doi.org/10.1007/s00339-021-04515-8

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