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Non-Volatile In-Ga-Zn-O Transistors for Neuromorphic Computing

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Abstract

Hardware neural networks (HNNs) can be constructed by placing synaptic devices in a crossbar array, and these systems may overcome the inherent inefficiency of conventional computing systems. In this work, non-volatile In-Ga-Zn-O transistors were designed for use in HNNs. The In-Ga-Zn-O transistors consist of a naturally oxidized nanothick Al2O3/ion gel stacking dielectric, in which the gate electric field induces positive charge trapping effect could pull the subthreshold swing down to the value of 32.9 mV/decade, which is much lower than the theoretical limit of 60 mV/decade at room temperature. A highly repeatable and robust hysteresis behavior was observed in the transfer curve of the devices. These three-terminal In-Ga-Zn-O transistors could implement important memristive synaptic functions, including non-volatile memory, synaptic plasticity, and long-term potentiation/depression. A simulated HNN built from these In-Ga-Zn-O transistors with long-term potentiation/depression and optimized amplification factor exhibits 84% recognition accurate of handwritten data. The work illustrates an important application of energy-efficient HNNs by using high-performance non-volatile neuromorphic devices.

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Acknowledgement

This work is supported by the National Natural Science Foundation of China (61975241, 51673214) and the National Key Research and Development Program of China (2017YFA0206600).

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Authors and Affiliations

  1. Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 410083, Changsha, Hunan, People’s Republic of China

    Yulong Huang, Weijie Qiu, Wanrong Liu, Chenxing Jin, Jia Sun & Junliang Yang

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  1. Yulong Huang
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  2. Weijie Qiu
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  3. Wanrong Liu
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  5. Jia Sun
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Correspondence to Jia Sun or Junliang Yang.

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Huang, Y., Qiu, W., Liu, W. et al. Non-Volatile In-Ga-Zn-O Transistors for Neuromorphic Computing. Appl. Phys. A 127, 356 (2021). https://doi.org/10.1007/s00339-021-04512-x

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