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Electron mobility influenced by optical phonons in AlGaN/GaN MISHEMTs with different gate dielectrics

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Abstract

The electron mobility influenced by optical phonons in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with different gate dielectrics around room temperature is investigated theoretically. The electronic states are obtained by the finite difference method in consideration of built-in electric fields and the conduction band bending. The optical phonons are analyzed using the dielectric continuum model. Based on the theory of force balance equation, the electron mobility of two-dimensional electron gas is obtained for the structures with four different gate dielectrics of Al2O3, HfO2, SiO2 and Si3N4. Our results show that the electron mobility is the highest in HfO2 systems when Al composition in AlGaN is small, whereas the mobility is the highest in Al2O3 systems as Al composition increases to a certain value. The effects of the ternary mixed crystals, each layer’s size and the fixed charges on the sheet density and electron mobility are also discussed for different gate dielectric materials.

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Acknowledgements

The work was supported by the National Natural Science Foundation of China (Grant No. 61764012), the Natural Science Foundations of Inner Mongolia Autonomous Region (Grant Nos. 2016MS0619 and 2018MS01019).

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Authors and Affiliations

  1. Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, China

    Xiaojuan Zhou, Zhiping Wang, Yuan Qu & Shiliang Ban

  2. Ordos Institute of Applied Technology, Ordos, 017000, Inner Mongolia, China

    Xiaojuan Zhou

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Zhou, X., Wang, Z., Qu, Y. et al. Electron mobility influenced by optical phonons in AlGaN/GaN MISHEMTs with different gate dielectrics. Appl. Phys. A 126, 825 (2020). https://doi.org/10.1007/s00339-020-04005-3

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