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An integrated GaInP/Si dual-junction solar cell with enhanced efficiency using TOPCon technology

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Abstract

The main focus here is to electrically connect lattice mismatched GaInP/Si sub-cells and enhance the overall cell performance of the designed dual-junction solar cell. This dual-junction solar cell is designed with carrier-selective tunnel oxide passivated contact (CS-TOPCon) technology. The lattice mismatch between the sub-cells is reduced by inserting buffer layer in the top cell. This buffer layer helps in better photogeneration and carrier transport and increases short-circuit current. The presence of electric field in the tunnel oxide region and linear behavior of the pinholes (micro-resistors) is extensively studied. GaInP and Si cells are individually simulated using Silvaco ATLAS TCAD simulation tool. The CS-TOPCon technology at the passivated bottom cell reduces the recombination and increases the external open-circuit voltage. The integrated GaInP/Si dual-junction solar cell results in the efficiency of 28.14% and the application of CS-TOPCon technology enhances the efficiency up to 35.32% using ASTM-certified globally accepted AM1.5G spectrum. The obtained result of electrically connected DJSC design is compared with available experimental data.

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  1. Department of Electronics and Communication Engineering, National Institute of Technology Raipur, G.E. Road, Raipur, Chhattisgarh, 492010, India

    Manish Verma & Guru Prasad Mishra

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Verma, M., Mishra, G.P. An integrated GaInP/Si dual-junction solar cell with enhanced efficiency using TOPCon technology. Appl. Phys. A 126, 661 (2020). https://doi.org/10.1007/s00339-020-03840-8

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