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Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure

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Abstract

We experimentally investigate the effect of post-deposition annealing on the charge distribution of a metal-oxide-semiconductor capacitor with a TiN/HfO2/SiO2/Si gate structure. We decoupled interfacial charges at the SiO2/Si and HfO2/SiO2 interfaces; bulk charges in HfO2; and the dipole formation at the HfO2/SiO2 interface. The interfacial charges at the HfO2/SiO2 interface decreased and the dipole increased after H2 or N2 annealing. Oxygen dangling bonds are the physical origin of the charges at the HfO2/SiO2 interface. The interfacial charges at the SiO2/Si interface and the bulk charges in HfO2 are almost unchanged.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China under No. 61904199.

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Authors and Affiliations

  1. School of Information Science and Technology, University of Science and Technology of China, Hefei, 230026, China

    Tingting Li & Fujiang Lin

  2. Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China

    Tingting Li, Xiaolei Wang, Xiaobin He, Bo Tang, Haojie Jiang, Wenjuan Xiong, Peng Zhang, Junfeng Li & Jinjuan Xiang

  3. Department of Physics and Electronic Science, Weifang University, Weifang, 261061, China

    Kai Han

  4. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China

    Zeming Qi

  5. School of Electronic and Information Engineering, North China University of Technology, Beijing, 100144, China

    Jiang Yan

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  1. Tingting Li
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Correspondence to Kai Han, Jinjuan Xiang or Fujiang Lin.

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Li, T., Wang, X., He, X. et al. Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure. Appl. Phys. A 126, 381 (2020). https://doi.org/10.1007/s00339-020-03565-8

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