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Determination of carrier lifetime in thermally evaporated In2S3 thin films by light induced transient grating technique

Abstract

In2S3 thin films were deposited onto soda lime glass substrates using thermal evaporation technique at a constant substrate temperature of 300 °C and the films were annealed in a sulfur ambient at 250 °C and 300 °C for 1 h. Light induced transient grating (LITG) technique was used to determine the carrier lifetime in In2S3 thin films. The determined carrier lifetime values for different excitation energy densities, I0 = 0.06–1.64 mJ/cm2 decreased from 206  to 18 ps and 150 to 14 ps for the films annealed at 250 °C and 300 °C respectively. Further, the bimolecular, Auger recombination coefficients and diffusion coefficient were determined in the films. The observed bimolecular carrier recombination origin was explained by interface and Auger recombination processes.

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Acknowledgements

One of the authors, S. Rasool is thankful to the University Grants Commission (UGC), New Delhi for the financial assistance via the “UGC-BSR fellowship”. The authors, Prof. K.T. Ramakrishna Reddy and Prof. M.S. Tivanov wish to acknowledge the Dept. of Science and Technology, Govt. of India (Grant No: DST/INT/BLR/P-30/2019) and the State Committee on Science and Technology of the Republic of Belarus (Grant No: F19INDG-008). P. Ščajev acknowledges the financial support provided by the Research Council of Lithuania under the project No. S-MIP-19-34.

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Rasool, S.,  Ščajev, P., Saritha, K. et al. Determination of carrier lifetime in thermally evaporated In2S3 thin films by light induced transient grating technique. Appl. Phys. A 126, 312 (2020). https://doi.org/10.1007/s00339-020-03495-5

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  • DOI: https://doi.org/10.1007/s00339-020-03495-5

Keywords

  • In2S3 films
  • LITG
  • Carrier lifetime
  • Bimolecular coefficient
  • Auger coefficient