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Electronic and optical properties of Ge doped graphene and BN monolayers

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Abstract

The effect of germanium doping on the properties of hexagonal boron nitride and graphene monolayers was investigated using ab initio calculations. For boron nitride, the obtained results indicate the formation of electronic states in the region of the gap, near the Fermi level. The incorporation of such impurity atoms also induces an apparent decrease in the energy gap and a significant reduction in the optical conductivity. The calculations indicate small absorbance for wavelengths from infrared to visible light. For the graphene layer, it has been obtained a null gap semi-metal material. This result can be associated with the corresponding displacement of the Fermi level. In addition, the germanium doped graphene shows similar optical properties when compared with the pristine layer.

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Acknowledgements

The authors would like to thank the financial support provided by the Brazilian agencies CAPES, CNPq and INCT - Nanomateriais de Carbono.

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Authors and Affiliations

  1. Departamento de Física, Universidade Federal da Paraíba, Caixa Postal 5008, João Pessoa, PB, 58051-900, Brazil

    L. Melo Oliveira, O. F. P. Santos & S. Azevedo

  2. Unidade Acadêmica de Serra Talhada, Universidade Federal Rural de Pernambuco, Caixa Postal 063, Serra Talhada, PE, 56909-535, Brazil

    O. F. P. Santos

  3. Departamento de Física, Universidade Federal do Piauí, Teresina, PI, 64049-550, Brazil

    J. R. Martins

  4. Instituto Federal da Bahia – Campus Vitoria da Conquista, Av. Sergio Vieira de Mello 3150, Vitória da Conquista, BA, 45078-900, Brazil

    J. R. Kaschny

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  1. L. Melo Oliveira
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  3. J. R. Martins
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Melo Oliveira, L., Santos, O.F.P., Martins, J.R. et al. Electronic and optical properties of Ge doped graphene and BN monolayers. Appl. Phys. A 125, 790 (2019). https://doi.org/10.1007/s00339-019-3086-7

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