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Low-temperature dielectric anomaly in Bi0.5K0.5TiO3

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Abstract

Here, we report our studies on Bi0.5K0.5TiO3 (BKT) prepared by conventional solid-state reaction method and two-step sintering method to further understand the dielectric dispersion around room temperature. The coexistence of the tetragonal and cubic phases is confirmed. Most importantly, we find an extra dielectric loss anomaly around –100 °C. The polarization response suggests the contribution of the hysteresis-free polarization. Correspondingly, a Raman-active mode around 75 cm−1 is frozen on cooling. A model is proposed to interpret the origin of the low-temperature dielectric anomaly.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Project no. 11704301), Natural Science Basic Research Plan in Shaanxi Province of China (Program no. 2018JQ1092 and 2019JM414) and President’s Fund of Xi’an Technological University (Project no. XAGDXJJ18006).

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Authors and Affiliations

  1. Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an, 710021, China

    Yongxing Wei, Ning Zhang, Gang Xu, Changqing Jin, Lin Hu, Ling Gao & Zengyun Jian

  2. Electronic Materials Research Lab, Key Laboratory of Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, 710021, China

    Weitong Zhu

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  1. Yongxing Wei
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  2. Ning Zhang
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  3. Gang Xu
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  5. Lin Hu
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Correspondence to Yongxing Wei.

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Wei, Y., Zhang, N., Xu, G. et al. Low-temperature dielectric anomaly in Bi0.5K0.5TiO3. Appl. Phys. A 125, 645 (2019). https://doi.org/10.1007/s00339-019-2930-0

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