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Performance analysis of AlGaAs/GaAs/InGaAs-based asymmetric long-wavelength QWIP

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Abstract

In this paper, the effect of active layer doping and the In concentration (y) of InyGa1–yAs-based asymmetric QWIP are studied. A theoretical model is developed for the study by including the effect of strain due to lattice mismatch between GaAs and InGaAs stepped QW and also including the effect of doping on Hartree potential. High absorption and, hence, enhanced responsivity is obtained by incorporating Indium. However, absorption coefficient decreases with the increasing In concentration (y). However, the performance of the asymmetric QWIP is still better than its symmetric QWIP. Moreover, dark current also reduces in asymmetric QWIP as compared to symmetric QWIP.

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Acknowledgements

This work is partly supported by the Centre of Excellence in Renewable Energy, project under FAST, MHRD, Govt. of India (F. No. 5-6/2013-TS-VII) at Indian Institute of Technology (Indian School of Mines), Dhanbad, India.

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  1. Department of Electronics and Communication Engineering, Asansol Engineering College, Asansol, India

    Md. Aref Billaha

  2. Department of Electronics Engineering, Indian Institute of Technology (Indian School of Mines), Dhanbad, India

    Mukul K. Das

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Billaha, M.A., Das, M.K. Performance analysis of AlGaAs/GaAs/InGaAs-based asymmetric long-wavelength QWIP. Appl. Phys. A 125, 457 (2019). https://doi.org/10.1007/s00339-019-2750-2

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