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Carriers’ localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311)A- and (311)B-InP substrates

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Abstract

We present a photoluminescence (PL) study of the optical properties in In0.513Al0.487As/InP heterostructures grown on (311)A- and (311)B-InP substrates. The exciton localization effect is studied by considering the substrate polarity. An asymmetric PL line shape denoted P1 and P1′ associated with the type II transition, for the (311)B and (311)A substrate polarity, respectively, in the lower energies side has been found in both samples. Using PL technique, luminescence measurements were carried out as a function of temperature in the range of [10–300 K]. The PL peak energy, the PL intensity and the full width at half maximum (FWHM) display anomalous behaviors such as S-shaped and N-shaped. Implying the presence of localized carriers, they were ascribed to the energy potential modulation associated to the Indium cluster formation and piezoelectric (PZ) field. We investigate the presence of localized carriers by excitation density variation. With the assistance of localized-state ensemble (LSE) luminescence model, the PL spectra of the samples are quantitatively explained into the entire temperature range.

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References

  1. V.K. Dixit, S. Porwal, S.D. Singh, T.K. Sharma, S. Ghosh, S.M. Oak, J. Phys. D Appl. Phys. 47, 065103 (2014)

    Article  ADS  Google Scholar 

  2. Y.F. Wu, J.C. Lee, T.E. Nee, J.C. Wang, J. Lumin. 131, 1267–1271 (2011)

    Article  Google Scholar 

  3. F. Nakajima, S. Sanorpim, W. Ono, R. Katayana, K. Onabe, Phys. Stat. Sol.(A) 203, 1641 (2006)

    Article  ADS  Google Scholar 

  4. E. Laureto, I.F.L. Dias, J.L. Duarte, E. Di Mauro, H. Iwamoto, M.T.P. Freitas, S.A. Lourenc, D.O. Toginho Filho, J. Appl. Phys. 85, 8–15 (1999)

    Article  Google Scholar 

  5. T. Hidouri, F. Saidi, H. Maaref, P. Rodriguez, L. Auvray, Opt. Mater. 60, 487–494 (2016)

    Article  ADS  Google Scholar 

  6. M. Ezzedini, T. Hidouri, M.H.H. Alouane, A. Sayari, E. Shalaan, N. Chauvin, L. Sfaxi, F. Saidi, A. Al-Ghamdi, C. Bru-Chevallier, H. Maaref, Nanoscale Res. Lett. 12, 450 (2017)

    Article  ADS  Google Scholar 

  7. B. Smiri, I. Fraj, F. Saidi, R. Mghaïth, H. Maaref, J. Alloy. Compd. 736, 29–34 (2018)

    Article  Google Scholar 

  8. W. Liu, D.G. Zhao, D.S. Jiang, P. Chen, Z.S. Liu, J.J. Zhu, X. Li, F. Liang, J.P. Liu, S.M. Zhang, H. Yang, Y.T. Zhang, G.T. Du, J. Superlattices Microstruct. 88, 50–55 (2015)

    Article  ADS  Google Scholar 

  9. I. Fraj, T. Hidouri, F. Saidi, H. Maaref, Superlattices Microstruct. 102, 351–358 (2017)

    Article  ADS  Google Scholar 

  10. M.D. Teodoro, I.F.L. Dias, E. Laureto, J.L. Duarte, P.P. González-Borrero, S.A. Lourenço, I. Mazzaro, E. Marega Jr., G.J. Salamo, J. Appl. Phys. 103, 093508 (2008)

    Article  ADS  Google Scholar 

  11. Q. Li, S.J. Xu, M.H. Xie, S.Y. Tong, J. Phys. Condens. Matter 17, 4853–4858 (2005)

    Article  ADS  Google Scholar 

  12. J. Hellara, K. Borgi, H. Maaref, V. Souliere, Y. Monteil, Mater. Sci. Eng. C 21, 231–236 (2002)

    Article  Google Scholar 

  13. D. Vignaud, X. Wallart, F. Mollot, B. Sermage, J. Appl. Phys. 84, 2138 (1998)

    Article  ADS  Google Scholar 

  14. P. Abraham, Y. Monteil, M. Sacilotti, T. Benyattou, M.A. Garcia, S. Moneger, A. Tabata, R. Landers, J. Morais, M. Pitaval, Appl. Surf. Sci 65–66, 777–783 (1993)

    Article  ADS  Google Scholar 

  15. T. Hidouri, R. Hamila, I. Fraj, F. Saidi, H. Maaref, P. Rodriguez, L. Auvray, Superlattices Microstruct. 103, 386–394 (2017)

    Article  ADS  Google Scholar 

  16. E. Abdoli, H. Haratizadeh, Phys. Status Solidi B 1, 170–175 (2010)

    Article  ADS  Google Scholar 

  17. Q. Li et al., Appl. Phys. Lett. 79, 1810–1812 (2001)

    Article  ADS  Google Scholar 

  18. Q. Li, S.J. Xu, M.H. Xie, S.Y. Tong, Euro Phys. Lett. 71, 994–1000 (2005)

    Article  ADS  Google Scholar 

  19. M. Bennour, L. Bouzaiene, F. Saidi, L. Sfaxi, H. Maaref, J. Lumin. 148, 207–213 (2014)

    Article  Google Scholar 

  20. P.G. Eliseev, P. Perlin, J.Y. Lee, M. Osinski, Appl. Phys. Lett. 71, 569 (1997)

    Article  ADS  Google Scholar 

  21. P.G. Eliseev, M. Osinski, J. Lee, T. Sugahara, S. Sakai, J. Electron. Mater. 29, 332–341 (2000)

    Article  ADS  Google Scholar 

  22. P.R. Berger, P.K. Bhattacharya, J. Singh, J. Appl. Phys. 61, 2856 (1987)

    Article  ADS  Google Scholar 

  23. J.P. Praseuth, L. Goldstein, P. Hénoc, J. Primot, G. Danan, J. Appl. Phys. 61, 215 (1987)

    Article  ADS  Google Scholar 

  24. E. Abdoli, H. Haratizadeh, Phys. Status Solidi B 247, 170–175 (2010)

    Article  ADS  Google Scholar 

  25. I. Fraj, F. Saidi, L. Bouzaiene, L. Sfaxi, H. Maaref, Superlattices Microstruct. 82, 406–414 (2015)

    Article  ADS  Google Scholar 

  26. F. Zeng, L. Zhu, W. Liu, X. Li, W. Liu, B.J. Chen, Y.C. Lee, Z.C. Feng, B. Liu, J. Alloy. Compd. 656, 881–886 (2016)

    Article  Google Scholar 

  27. A. Tromson-Carli, G. Patriarche, R. Druilhe, A. Lusson, Y. Marfaing, R. Triboulet, P.D. Brown, A.W. Brinkman, J. Mater. Sci. Eng. B 16, 145–150 (1993)

    Article  Google Scholar 

  28. X. Li, W.I. Wang, IEEE Electron Device Lett. 14, 4 (1993)

    Article  ADS  Google Scholar 

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Acknowledgements

This work was supported by the Université de Monastir, Laboratoire de Micro-Opto électronique et Nanostructures (LMON), Faculté des Sciences, 5019, Monastir, Tunisia.

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Correspondence to Badreddine Smiri.

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Smiri, B., Hidouri, T., Saidi, F. et al. Carriers’ localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311)A- and (311)B-InP substrates. Appl. Phys. A 125, 134 (2019). https://doi.org/10.1007/s00339-019-2444-9

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  • DOI: https://doi.org/10.1007/s00339-019-2444-9

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