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Band gap energy of ZnOxSe1−x over the entire composition range

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Abstract

A model predicting the band gap energy of ZnOxSe1−x over the entire composition range is set up. It is found that the model can provide a good description for the band gap energy of ZnOxSe1−x. It is also found that the physical mechanisms for the band gap evolution in different composition ranges are different. Although the physical mechanism for the band gap evolution in the Se-rich region differs from that in the O-rich region, the difference between the band gap reductions in the Se-rich and O-rich regions is not large. In addition, it is found that the band gap bowing in the middle composition region is smaller than that in the Se-rich and O-rich regions. The reason is that the middle composition region lies in the bandlike region while the Se-rich and the O-rich composition regions lie in the impurity-like region.

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Acknowledgements

This work is supported by National Nature Science Foundation of China (61504094, 61874077, 61605144), Tianjin Research Program of Application Foundation and Advanced Technology (No. 15JCYBJC51900).

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Authors and Affiliations

  1. Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, 300387, China

    Chuan-Zhen Zhao, Si-Yu Sun, Xiao-Dong Sun, Sha-Sha Wang & Jun Wang

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  1. Chuan-Zhen Zhao
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  2. Si-Yu Sun
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  3. Xiao-Dong Sun
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  4. Sha-Sha Wang
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  5. Jun Wang
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Correspondence to Chuan-Zhen Zhao.

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Zhao, CZ., Sun, SY., Sun, XD. et al. Band gap energy of ZnOxSe1−x over the entire composition range. Appl. Phys. A 124, 703 (2018). https://doi.org/10.1007/s00339-018-2124-1

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