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Aluminum-induced crystallization of silicon suboxide thin films

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Abstract

Polycrystalline silicon (poly-Si) thin films are fabricated by aluminum-induced crystallization (AIC) of amorphous silicon suboxide (a-SiOx, x = 0.22) at 550 °C for 20 h. AIC of a-SiO0.22 via thermal annealing of a-SiO0.22/Al bilayer structures leads to layer exchange with the formation of poly-Si films with (111) preferential orientation and high-crystalline quality-coated with a layer of a mixture of Al, Si, and O atoms with inclusions of silicon nanocrystallites. The initial a-SiO0.22/Al thickness ratio approximately equal to 1 provides the formation of a discontinuous poly-Si film with a crystallized fraction of 85%, as shown by optical microscopy.

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Acknowledgements

This study was financially supported by the Russian Science Foundation, project # 17-79-10352. HRTEM and SEM studies were performed using the equipment of CCU “Nanostructures”.

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Authors and Affiliations

  1. Kutateladze Institute of Thermophysics SB RAS, Ac. Lavrentiev Ave. 1, Novosibirsk, 630090, Russia

    A. O. Zamchiy, E. A. Baranov & S. Ya. Khmel

  2. Rzhanov Institute of Semiconductor Physics SB RAS, Ac. Lavrentiev Ave. 13, Novosibirsk, 630090, Russia

    V. A. Volodin, V. I. Vdovin & A. K. Gutakovskii

  3. Novosibirsk State University, Pirogova Str. 2, Novosibirsk, 630090, Russia

    A. O. Zamchiy, V. A. Volodin & A. K. Gutakovskii

Authors
  1. A. O. Zamchiy
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  2. E. A. Baranov
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  3. S. Ya. Khmel
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  4. V. A. Volodin
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  5. V. I. Vdovin
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  6. A. K. Gutakovskii
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Correspondence to A. O. Zamchiy.

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Zamchiy, A.O., Baranov, E.A., Khmel, S.Y. et al. Aluminum-induced crystallization of silicon suboxide thin films. Appl. Phys. A 124, 646 (2018). https://doi.org/10.1007/s00339-018-2070-y

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  • DOI: https://doi.org/10.1007/s00339-018-2070-y

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