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Texturization of as-cut p-type monocrystalline silicon wafer using different wet chemical solutions

Applied Physics A volume 124, Article number: 415 (2018) Cite this article

Abstract

Implementing texturization process on the monocrystalline silicon substrate reduces reflection and enhances light absorption of the substrate. Thus texturization is one of the key elements to increase the efficiency of solar cell. Considering as-cut monocrystalline silicon wafer as base substrate, in this work different concentrations of Na2CO3 and NaHCO3 solution, KOH–IPA (isopropyl alcohol) solution and tetramethylammonium hydroxide solution with different time intervals have been investigated for texturization process. Furthermore, saw damage removal process was conducted with 10% NaOH solution, 20 wt% KOH–13.33 wt% IPA solution and HF/nitric/acetic acid solution. The surface morphology of saw damage, saw damage removed surface and textured wafer were observed using optical microscope and field emission scanning electron microscopy. Texturization causes pyramidal micro structures on the surface of (100) oriented monocrystalline silicon wafer. The height of the pyramid on the silicon surface varies from 1.5 to 3.2 µm and the inclined planes of the pyramids are acute angle. Contact angle value indicates that the textured wafer’s surface fall in between near-hydrophobic to hydrophobic range. With respect to base material absolute reflectance 1.049–0.75% within 250–800 nm wavelength region, 0.1–0.026% has been achieved within the same wavelength region when textured with 0.76 wt% KOH–4 wt% IPA solution for 20 min. Furthermore, an alternative route of using 1 wt% Na2CO3–0.2 wt% NaHCO3 solution for 50 min has been exploited in the texturization process.

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Acknowledgements

This work has been supported by the scholarship program of the ICT Division, Ministry of Posts, Telecommunications and IT, Government of Bangladesh. The authors also thank Bangladesh Atomic Energy Commission, for giving access to the solar cell fabrication laboratory and VLSI laboratory at Savar, Bangladesh and for giving permission in doing research. Furthermore, the authors thank IFRD Department, BCSIR for granting access to their Laboratory. Additionally, thanks to Glass and Ceramic Engineering Department, BUET for opening their laboratory facilities for this work. Finally, the authors also express their gratitude to the Faculty of Engineering and Technology and Department of Electrical and Electronic Engineering, University of Dhaka for contributing to do this kind of research.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, University of Dhaka, Dhaka, Bangladesh

    Galib Hashmi & Md. Habibur Rahman

  2. Department of Glass and Ceramic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh

    Muhammad Hasanuzzaman

  3. Institute of Electronics, AERE, Bangladesh Atomic Energy Commission, Savar, Dhaka, Bangladesh

    Mohammad Khairul Basher & Mahbubul Hoq

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  1. Galib Hashmi
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  2. Muhammad Hasanuzzaman
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  4. Mahbubul Hoq
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  5. Md. Habibur Rahman
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Correspondence to Galib Hashmi.

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Hashmi, G., Hasanuzzaman, M., Basher, M.K. et al. Texturization of as-cut p-type monocrystalline silicon wafer using different wet chemical solutions. Appl. Phys. A 124, 415 (2018). https://doi.org/10.1007/s00339-018-1818-8

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  • DOI: https://doi.org/10.1007/s00339-018-1818-8

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