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Applied Physics A

, 124:357 | Cite as

Structural, optical and photoelectrical properties of thermally annealed amorphous In15Sb15Se70 chalcogenide films

  • Shaveta Sharma
  • Rita Sharma
  • Praveen Kumar
  • R. Thangaraj
  • K. Asokan
  • M. Mian
Article
  • 86 Downloads

Abstract

In this work, the effect of annealing on the structure and photoelectrical properties of In15Sb15Se70 films has been investigated. The annealed films (333–453 K) were characterized by XRD, SEM, TEM, optical absorption, Raman spectroscopy and photoconductivity measurements. The amorphous/crystalline structure of as-prepared and annealed samples was confirmed by XRD and SEM/TEM studies. The crystallization of Se, Sb2Se3 and In4Se3 phases has been observed upon annealing of the film samples. The position and shape of Raman bands have been significantly altered with annealing temperature. The indirect optical gap varies from 1.53 to 1.08 eV which is very useful for solar cell applications. DC activation energy and photosensitivity were found to decrease with annealing temperature. The decay of photocurrents was well fitted to stretched exponential function and the minimum value for fit parameters for the sample annealed at 373 K has revealed least defect states in mobility gap for In15Sb15Se70 films.

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Semiconductors Laboratory, Department of PhysicsGND UniversityAmritsarIndia
  2. 2.Department of PhysicsDAV UniversityJalandharIndia
  3. 3.Material Science DivisionInter University Accelerator CentreNew DelhiIndia

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