Applied Physics A

, 124:258 | Cite as

Unidirectional threshold switching in Ag/Si-based electrochemical metallization cells for high-density bipolar RRAM applications

  • Chao Wang
  • Bing Song
  • Qingjiang Li
  • Zhongming Zeng
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Abstract

We herein present a novel unidirectional threshold selector for cross-point bipolar RRAM array. The proposed Ag/amorphous Si based threshold selector showed excellent threshold characteristics in positive field, such as high selectivity (~ 105), steep slope (< 5 mV/decade) and low off-state current (< 300 pA). Meanwhile, the selector exhibited rectifying characteristics in the high resistance state as well and the rectification ratio was as high as 103 at ± 1.5 V. Nevertheless, due to the high reverse current about 9 mA at − 3 V, this unidirectional threshold selector can be used as a selection element for bipolar-type RRAM. By integrating a bipolar RRAM device with the selector, experiments showed that the undesired sneak was significantly suppressed, indicating its potentiality for high-density integrated nonvolatile memory applications.

Notes

Acknowledgements

This work was supported in part by the National Science Foundation of China (11274343, 51761145025).

References

  1. 1.
    R. Waser, M. Aono, Nat. Mater. 6, 833–840 (2007)ADSCrossRefGoogle Scholar
  2. 2.
    I. Valov, R. Waser, J.R. Jameson, M.N. Kozicki, Nanotechnology 22, 254003 (2011)ADSCrossRefGoogle Scholar
  3. 3.
    C.S. Yang, D.S. Shang, Y.S. Chai, L.Q. Yan, B.G. Shen, Y. Sun, Phys. Chem. Chem. Phys. 19, 4190–4198 (2017)CrossRefGoogle Scholar
  4. 4.
    A.H. Khan, S. Ghosh, B. Pradhan, A. Dalui, L.K. Shrestha, S. Acharya, K. Ariga, Bull. Chem. Soc. Jpn. 90, 627–648 (2017)CrossRefGoogle Scholar
  5. 5.
    E.C. Demis, R. Aguilera, K. Scharnhorst, M. Aono, A.Z. Stieg, J.K. Gimzewski, Jpn. J. Appl. Phys. 55, 1102B2 (2016)CrossRefGoogle Scholar
  6. 6.
    Z.R. Wang, S. Joshi, S.E. Savel’ev, H. Jiang, R. Midya, P. Lin, M. Hu, N. Ge, J.P. Strachan, Z.Y. Li, Q. Wu, M. Barne, G.L. Li, H.L. Xin, R.S. Williams, Q.F. Xia, J.J. Yang, Nat. Mater. 16, 101–108 (2017)ADSCrossRefGoogle Scholar
  7. 7.
    K.H. Kim, S. Gaba, D. Wheeler, J.M. Cruz Albrecht, T. Hussain, N. Srinivasa, W. Lu, Nano Lett. 12, 389–395 (2012)ADSCrossRefGoogle Scholar
  8. 8.
    E. Linn, R. Rosezin, C. Kugeler, R. Waser, Nat. Mater. 9, 403–406 (2010)ADSCrossRefGoogle Scholar
  9. 9.
    B.S. Kang, S.-E. Ahn, M.-J. Lee, G. Stefanovich, K.H. Kim, W.X. Xianyu, C.B. Lee, Y. Park, I.G. Baek, B.H. Park, Adv. Mater. 20, 3066–3069 (2008)CrossRefGoogle Scholar
  10. 10.
    W. Lee, J. Park, S. Kim, J. Woo, J. Shin, G. Choi, S. Park, D. Lee, E. Cha, B.H. Lee, H. Hwang, ACS Nano 6, 8166–8172 (2012)CrossRefGoogle Scholar
  11. 11.
    K. Gopalakrishnan, R.S. Shenoy, C.T. Rettner, K. Virwani, D.S. Bethune, R.M. Shelby, G.W. Burr, A. Kellock, R.S. King, K. Nguyen, A.N. Bowers, M. Jurich, B. Jackson, A.M. Friz, T. Topuria, P.M. Rice, B.N. Kurdi, Novel Selector for High Density Non-Volatile Memory with Ultra-Low Holding Voltage and 107 On/Off Ratio, in Symp. on VLSI Tech. Dig. (2010), p. 205Google Scholar
  12. 12.
    M. Anbarasu, M. Wimmer, G. Bruns, M. Salinga, M. Wuttig, Appl. Phys. Lett. 100, 143505 (2012)ADSCrossRefGoogle Scholar
  13. 13.
    M. Son, J. Lee, J. Park, J. Shin, G. Choi, S. Jung, W. Lee, S. Kim, S. Park, H. Hwang, IEEE Electron Device Lett. 32, 1579–1581 (2011)ADSCrossRefGoogle Scholar
  14. 14.
    W. Chen, H.J. Barnaby, M.N. Kozicki, IEEE Electron Device Lett. 37, 580–583 (2016)ADSCrossRefGoogle Scholar
  15. 15.
    Y. Li, P. Yuan, L. Fu, R. Li, X. Gao, C. Tao, Nanotechnology 26, 391001 (2015)CrossRefGoogle Scholar
  16. 16.
    D. Liu, H. Cheng, G. Wang, X. Zhu, N. Wang, J. Appl. Phys. 114, 154906 (2013)ADSCrossRefGoogle Scholar
  17. 17.
    R. Midya, Z.R. Wang, J.M. Zhang, S.E. Savel’ev, C. Li, M.Y. Rao, M.H. Jang, S. Joshi, H. Jiang, P. Lin, K. Norris, N. Ge, Q. Wu, M. Barnell, Z.Y. Li, H.L.L. Xin, R.S. Williams, Q.F. Xia, J.J. Yang, Adv. Mater. 29, 1604457 (2017)CrossRefGoogle Scholar
  18. 18.
    J. Song, A. Prakash, D. Lee, J. Woo, E. Cha, S. Lee, H. Hwang, Appl. Phys. Lett. 107, 113504 (2015)ADSCrossRefGoogle Scholar
  19. 19.
    J. Song, J. Woo, A. Prakash, D. Lee, H. Hwang, IEEE Electron Device Lett. 36, 681–683 (2015)ADSCrossRefGoogle Scholar
  20. 20.
    J.J. Yang, M.X. Zhang, J.P. Strachan, F. Miao, M.D. Pickett, R.D. Kelley, G. Medeiros-Ribeiro, R.S. Williams, Appl. Phys. Lett. 97, 232102 (2010)ADSCrossRefGoogle Scholar
  21. 21.
    J. Yoo, J. Woo, J. Song, H. Hwang, AIP Adv. 5, 127221 (2015)ADSCrossRefGoogle Scholar
  22. 22.
    K. Ariga, J.B. Li, J.B. Fei, Q.M. Ji, J.P. Hill, Adv. Mater. 28, 1251–1286 (2016)CrossRefGoogle Scholar
  23. 23.
    N. Onofrio, D. Guzman, A. Strachan, Nat. Mater. 14, 440–446 (2015)ADSCrossRefGoogle Scholar
  24. 24.
    H.X. Yang, M.H. Li, W. He, Y. Jiang, K.G. Lim, W.D. Song, V.Y.Q. Zhuo, C.C. Tan, E.K. Chua, W.J. Wang, Y. Yang, R. Ji, Highly-Scalablenovel Access Device Based on Mixed Ionic Electronic Conduction (MIEC) Materials for High Density Phase Change Memory (PCM) Arrays, in Symp. on VLSI Tech. Dig. (2015), p. T130Google Scholar
  25. 25.
    W. He, H.X. Yang, L. Song, K.J. Huang, R. Zhao, IEEE Electron Device Lett. 38, 172–174 (2017)ADSCrossRefGoogle Scholar
  26. 26.
    C.J. Amsinck, N.H. Di Spigna, D.P. Nackashi, P.D. Franzon, Nanotechnology 16, 2251–2260 (2005)ADSCrossRefGoogle Scholar
  27. 27.
    C.L. Lo, T.H. Hou, M.C. Chen, J.J. Huang, IEEE Trans. Electron Devices. 60, 420–426 (2013)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Chao Wang
    • 1
    • 2
  • Bing Song
    • 3
  • Qingjiang Li
    • 3
  • Zhongming Zeng
    • 1
    • 2
  1. 1.School of Nano Technology and Nano BionicsUniversity of Science and Technology of ChinaSuzhouPeople’s Republic of China
  2. 2.Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhouPeople’s Republic of China
  3. 3.College of Electronic Science and EngineeringNational University of Defence TechnologyChangshaPeople’s Republic of China

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