Applied Physics A

, 124:258 | Cite as

Unidirectional threshold switching in Ag/Si-based electrochemical metallization cells for high-density bipolar RRAM applications

  • Chao Wang
  • Bing Song
  • Qingjiang Li
  • Zhongming Zeng
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Abstract

We herein present a novel unidirectional threshold selector for cross-point bipolar RRAM array. The proposed Ag/amorphous Si based threshold selector showed excellent threshold characteristics in positive field, such as high selectivity (~ 105), steep slope (< 5 mV/decade) and low off-state current (< 300 pA). Meanwhile, the selector exhibited rectifying characteristics in the high resistance state as well and the rectification ratio was as high as 103 at ± 1.5 V. Nevertheless, due to the high reverse current about 9 mA at − 3 V, this unidirectional threshold selector can be used as a selection element for bipolar-type RRAM. By integrating a bipolar RRAM device with the selector, experiments showed that the undesired sneak was significantly suppressed, indicating its potentiality for high-density integrated nonvolatile memory applications.

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Notes

Acknowledgements

This work was supported in part by the National Science Foundation of China (11274343, 51761145025).

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Chao Wang
    • 1
    • 2
  • Bing Song
    • 3
  • Qingjiang Li
    • 3
  • Zhongming Zeng
    • 1
    • 2
  1. 1.School of Nano Technology and Nano BionicsUniversity of Science and Technology of ChinaSuzhouPeople’s Republic of China
  2. 2.Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhouPeople’s Republic of China
  3. 3.College of Electronic Science and EngineeringNational University of Defence TechnologyChangshaPeople’s Republic of China

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