Applied Physics A

, 124:228 | Cite as

Activation of dopant in silicon by ion implantation under heating sample at 200 °C

  • Toshiyuki Sameshima
  • Keisuke Yasuta
  • Masahiko Hasumi
  • Tomokazu Nagao
  • Yutaka Inouchi


Activation and carrier generation are reported in the case of phosphorus implantation with a dose of 2.0 × 1015 cm−2 at 70 keV to crystalline silicon substrates under heating ranging from 200 to 500 °C. The analysis of the optical reflectivity spectra of implanted surfaces revealed that the effective amorphized thickness was low of 2.9 nm in the case of 200 °C-phosphorus implantation, while it was large of 140 nm for implantation at room temperature. The carrier density par unit area increased from 6.9 × 1013 to 4.8 × 1014 cm−2 and the photo-induced minority carrier effective lifetime increased from 2.2 × 10−6 to 1.6 × 10−4 s as the implantation temperature increased from 200 to 500 °C. Defect reduction with 1.3 MPa H2O vapor heating at 250 °C for 3 h increased the carrier density par unit area of the 200 °C-phosphorus-implanted sample to 2.7 × 1014 cm−2. The rectified characteristics were obtained by current–voltage measurement in the case of phosphorus implantation to p-type silicon substrate. Photovoltaic effect was also observed. These results show that the ion implantation under low temperature heating has a capability of p–n junction formation.


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Toshiyuki Sameshima
    • 1
  • Keisuke Yasuta
    • 1
  • Masahiko Hasumi
    • 1
  • Tomokazu Nagao
    • 2
  • Yutaka Inouchi
    • 2
  1. 1.Tokyo University of Agriculture and TechnologyTokyoJapan
  2. 2.Nissin Ion Equipment Co. Ltd.ShigaJapan

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