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Understanding the unusual photoluminescence properties of SiO x nanoropes prepared by thermal evaporation method

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Abstract

We report the indium oxide catalyzed growth of the amorphous SiO x nanoropes using the silicon wafer as both source-cum-substrates by thermal evaporation and investigate the luminescence properties. Both blue and yellow emissions are observed from the nanoropes. Blue emission could be attributed to the defect centers of the oxygen deficiency in the nanoropes, whereas yellow emission is due to the trapped excitons in the Si/SiO x interface of the materials. Effect of laser exposure on luminescence properties is studied by performing time-dependent PL measurements at different ambiance. Irrespective of laser excitation and ambiance, a monoexponential decay of blue emission with continuous laser exposure is clearly observed, which is due to the gradual removal of surface adsorbed species.

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Acknowledgements

Authors would like to thank Prof. P. V. Satyam of Institute of Physics, Bhubaneswar for providing the TEM Facility.

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Author notes

  1. Ashutosh Rath

    Present address: Department of Material Science and Engineering, National University of Singapore, Singapore, 117575, Singapore

  2. Subrata Senapati and Ashutosh Rath have contributed equally.

Authors and Affiliations

  1. Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India

    Subrata Senapati & Karuna Kar Nanda

  2. Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India

    Ashutosh Rath

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  1. Subrata Senapati
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Correspondence to Karuna Kar Nanda.

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Senapati, S., Rath, A. & Nanda, K.K. Understanding the unusual photoluminescence properties of SiO x nanoropes prepared by thermal evaporation method. Appl. Phys. A 124, 61 (2018). https://doi.org/10.1007/s00339-017-1480-6

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