Abstract
In this study, we report a self-selective (nonlinear) resistive switching memory cell, with high on-state half-bias nonlinearity of ~ 650, sub-μA operating current, and high On/Off ratios above 100×. Regarding the cell structure, a thermal oxidized HfOx layer in combination with a sputtered Ta2O5 layer was configured as an active stack, with Pt and Hf as top and bottom electrodes, respectively. The Ta2O5 acts as a selective layer as well as a series resistor, which could make the resistive switching happened in HfOx layer. Through the analysis of the physicochemical properties and electrical conduction mechanisms at each state, a vacancy-modulated resistance switching model was proposed to explain the switching behavior. The conductivity of HfOx layer was changed by polarity-dependent drift of the oxygen vacancy (Vo), resulting in an electron hopping distance change during switching. With the help of Ta2O5 selective layer, high nonlinearity observed in low resistance state. The proposed material stack shows a promising prospect to act as a self-selective cell for 3D vertical RRAM application.
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Acknowledgements
The authors thank the Instrumental Analysis Center of Shanghai Jiao Tong University and Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences.
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Ma, H., Feng, J., Gao, T. et al. A vacancy-modulated self-selective resistive switching memory with pronounced nonlinear behavior. Appl. Phys. A 123, 730 (2017). https://doi.org/10.1007/s00339-017-1350-2
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DOI: https://doi.org/10.1007/s00339-017-1350-2