Applied Physics A

, 123:372

Correlated resistive/capacitive state variability in solid TiO2 based memory devices

  • Qingjiang Li
  • Iulia Salaoru
  • Ali Khiat
  • Hui Xu
  • Themistoklis Prodromakis
Article
  • 123 Downloads

Abstract

In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.

Copyright information

© Springer-Verlag Berlin Heidelberg 2017

Authors and Affiliations

  • Qingjiang Li
    • 1
  • Iulia Salaoru
    • 2
  • Ali Khiat
    • 2
  • Hui Xu
    • 1
  • Themistoklis Prodromakis
    • 2
  1. 1.College of Electronics Science and EngineeringNational University of Defense TechnologyChangshaChina
  2. 2.Nano Group, Department of Electronic and Computer Science, Southampton Nanofabrication CentreUniversity of SouthamptonSouthamptonUK

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