Abstract
To obtain a desired performance of non-volatile memory applications, heterojunction-based resistive switching devices have tremendous attractions. In this paper, we demonstrate resistive switching characteristics for heterojunction of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/poly(4-vinylphenol) (PVP) composite and methyl red sandwiched in between bottom and top silver (Ag) electrodes. The proposed heterojunction layers are fabricated through spin coater at 3000 rpm for 60 s each, and the Ag electrodes are deposited through a commercialized inkjet printer DMP-3000 on polyethyleneterephthalate (PET) substrate. To verify the proposed device, the resistive switching on dual polarity voltage of ±10.2 V is measured over more than 500 endurance cycles. The paper also presents an R off/R on ratio which can adjust through an active layer’s area and a blending ratio of the PEDOT:PSS and PVP. By applying the area of 100 μm2 and the blending ratio of 3:1, we achieve the higher R off/R on ratio of 121, and its high resistance state (HRS) and low resistance state (LRS) are observed as 3000 kΩ and 24.7 kΩ, respectively. To maintain a long retention time, the device is encapsulated with PDMS, which changes a little variations of 52 Ω for HRS 498 Ω for LRS over 60 days. For the flexible realization to be utilized in wearable applications, it can be easily applied on a plastic substrate using printed technologies.
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This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIP) (NRF-2016R1A2B4015627).
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Hassan, G., Ali, S., Bae, J. et al. Flexible resistive switching device based on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/poly(4-vinylphenol) (PVP) composite and methyl red heterojunction. Appl. Phys. A 123, 256 (2017). https://doi.org/10.1007/s00339-017-0896-3
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DOI: https://doi.org/10.1007/s00339-017-0896-3