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Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

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Abstract

The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of ~70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

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Authors and Affiliations

  1. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan

    Y. C. Chiu, S. S. Yen, C. C. Fan & C. Y. Chang

  2. Department of Electronic Engineering, Xiamen University, Xiamen, 361005, China

    Z. W. Zheng

  3. Department of Mechatronic Engineering, National Taiwan Normal University, Taipei, 10610, Taiwan

    C. H. Cheng

  4. Department of Engineering and System Science, National Tsing Hua University, Hsinchu, 30013, Taiwan

    P. C. Chen

  5. Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan

    H. H. Hsu

  6. Department of Electronics Engineering, Chang Gung University, Taoyuan, 33302, Taiwan

    H. L. Kao

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  1. Y. C. Chiu
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Correspondence to C. H. Cheng.

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Chiu, Y.C., Zheng, Z.W., Cheng, C.H. et al. Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination. Appl. Phys. A 123, 188 (2017). https://doi.org/10.1007/s00339-017-0831-7

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  • DOI: https://doi.org/10.1007/s00339-017-0831-7

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