Abstract
Different compositions of (In0.5Sb0.5)1−x Te x (0.50 ≤ x ≤ 0.65) thin films were prepared by thermal evaporated technique, onto pre-cleaned glass substrates at ~298 K. Both dark electrical resistivity (ρ) and thermoelectric power (S) were measured in the temperature range 300–420 K. The concentration of the free carriers is obtained from DC conductivity and thermoelectric power measurements. Seebeck coefficient was found to be positive over entire temperature range, indicating that (In0.5Sb0.5)1−x Te x films are p-type semiconducting materials. Also, the variation of the mobility with temperature has been estimated. Increasing tellurium concentration is found to affect the DC conductivity and thermoelectric power of the studied films. The activation energies obtained from the DC conductivity and thermoelectric power increase with increasing tellurium content. The obtained results were interpreted according to the chemical bond approach.
Similar content being viewed by others
References
B. Bureau, S. Danto, H.L. Ma, C. Boussard-Plédel, X.H. Zhang, J. Lucas, Solid State Sci. 10, 427–433 (2008)
S. Maurugeon, B. Bureau, C. Boussard-Plédel, A.J. Faber, P. Lucas, X.H. Zhang et al., Opt. Mater. 33, 660–663 (2010)
S. Maurugeon, C. Boussard-Plédel, J. Troles, A.J. Faber, P. Lucas, X.H. Zhang et al., J. Lightwave Technol. 28, 3358–3363 (2010)
C. Conseil, J.C. Bastien, C. Boussard-Plédel, X.H. Zhang, P. Lucas, S. Dai et al., Opt. Mater. Express 2, 1470–1477 (2012)
Y. Meada, I. Ikuta, H. Andoh, Y. Sato, Jpn. J. Appl. Phys. 31, 451 (1992)
M. Okada, O. Okada, S. Shimizu, K. Hayashi, T. Sekiguchi, H. Inada, in Proceedings of the SPIE Seminar Proc, vol. 1316 (1990)
A.J. Rosenberg, A.J. Strauss, J. Phys. Chem. Solids 19, 105–116 (1961)
K. Kurata, T. Hirai, Solid State Electron. 9, 633–640 (1966)
S. Zwerdling, B. Lax, L.M. Roth, Phys. Rev. 108, 1402–1408 (1957)
E. Burstein, G.S. Picus, H.A. Gebbie, Phys. Rev. 103, 825–826 (1956)
P. Lostak, R. Novotny, J. Krouth, Z. Stary, Phys. Status Solid (a) 104, 841–844 (1987)
J. Horak, S. Karamozov, P. Lostak, Philos. Mag. B 72, 627–636 (1995)
V.A. Kulbachinskii, Z.M. Dasshevskii, M. Inoue, M. Sasaki, H. Negishi, W.X. Geo et al., Phys. Rev. B 52, 10915–10922 (1995)
J. Horak, Z. Stary, P. Lostak, J. Pancir, Phys. Chem. Solids 49, 191 (1988)
K.A. Aly, A.M. Abd Elnaeim, N. Afify, A.M. Abousehly, J. Non-Cryst. Solids 358, 2759–2763 (2012)
K.A. Aly, Y.B. Saddeek, A. Dahshan, J. Therm. Anal. Calorim. 119(2), 1215–1224 (2015)
A. Dahshan, K.A. Aly, J. Non-Cryst. Solids 408, 62–65 (2015)
J. Piprek, Semiconductor Optoelectronic Devices, Introduction to Physics and Simulation (Elsevier, San Diego, 2003)
K.A. Aly, M.A. Osman, A.M. Abousehly, A.A. Othman, J. Phys. Chem. Solids 69, 2514–2519 (2008)
K.A. Aly, A.M. Abousehly, A.A. Othman, J. Non-Cryst. Solids 354, 909–915 (2008)
K.A. Aly, A.M. Abousehly, M.A. Osman, A.A. Othman, Phys. B 403, 1848–1853 (2008)
A. Dahshan, P. Sharma, K.A. Aly, Dalton Trans. 44(33), 14799–14804 (2015)
K. Tanaka, K. Shimakawa, Amorphous Chalcogenide Semiconductors and Related Materials (Springer, New York, 2011)
H.E. Atyia, J. Optoelectron. Adv. Mater. 8, 1359–1366 (2006)
Z.H. Khan, M. Zulfeqaur, A. Kumar, M. Husain, Can. J. Phys. 80, 19–27 (2002)
H. Kozuka, K. Ohbayashi, K. Koumoto, Sci. Technol. Adv. Mater. 16, 026001 (2015)
L. Xu, D. Patel, C.S. Menoni, J.Y. Yeh, L.J. Mawst, N. Tansu, Appl. Phys. Lett. 89, 171112 (2006)
A. Dahshan, K.A. Aly, Philos. Mag. 88, 361–372 (2008)
M. Kastner, Phys. Rev. Lett. 28, 355–357 (1972)
K.A. Aly, H.H. Amer, A. Dahshan, Mater. Chem. Phys. 113, 690–695 (2009)
K.A. Aly, Philos. Mag. 89, 1063–1079 (2009)
D.R. Goyal, A.S. Maan, J. Non-Cryst. Solids 183, 182–185 (1995)
H.E. Atyia, A.M.A. El-Barry, Chalcogenide Lett. 3, 41–48 (2006)
S.N. Zhang, T.J. Zhu, S.H. Yang, C. Yu, X.B. Zhao, Acta Mater. 58, 4160–4169 (2010)
F. Völklein, E. Kessler, Thin Solid Films 155, 197–208 (1987)
D.M. Brown, S.J. Silverman, Phys. Rev. 136, A290–A299 (1964)
M. Sudha, A. Giridhar, K.J. Rao, J. Phys. C Solid State Phys. 10, 4497–4499 (1977)
H.S. Metwally, Phys. B 292, 213–220 (2000)
H. Fritzsche, Solid State Commun. 9, 1813–1815 (1971)
Z.H. Khan, M. Zulfequar, M. Ilyas, M. Husain, Acta Phys. Pol. A 98, 93–102 (2000)
A.F. Ioffe, Semicobuctor Thermoelements and Thermoelectric Cooling (Infoserch Ltd., London, 1956)
J. Lee, T. Kodama, Y. Won, M. Asheghi, K.E. Goodson, J. Appl. Phys. 112, 014902 (2012)
Author information
Authors and Affiliations
Corresponding authors
Rights and permissions
About this article
Cite this article
Aly, K.A., Saddeek, Y. & Dahshan, A. Discussion on the electrical and thermoelectrical properties of amorphous In–Sb–Te Films. Appl. Phys. A 122, 226 (2016). https://doi.org/10.1007/s00339-016-9740-4
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s00339-016-9740-4