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Controlled growth of high-quality graphene using hot-filament chemical vapor deposition

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Abstract

High-quality graphene was grown on polycrystalline copper (Cu) foils (1 cm × 1 cm) using hot-filament chemical vapor deposition method. The role of process parameters such as gas flow rates (methane and hydrogen), growth temperatures (filament and substrate) and durations on the growth of graphene was studied. The process parameters were also optimized to grow monolayer, bilayer and multilayer graphene in a controlled manner, and a growth mechanism was deduced from the experimental results. The presence of graphene on Cu foils was confirmed using X-ray photoelectron spectroscopy, micro-Raman spectroscopy, field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) techniques. FESEM micrographs clearly showed that the graphene starts nucleating as hexagonal islands and later evolves as dendritic lobe-shaped islands with an increase in supersaturation. The TEM images substantiate the growth of monolayer, bilayer and multilayer graphene. The I 2D/I G ratio = 2 confirmed the presence of the monolayer graphene and the absence of ‘D’ peak in the Raman spectrum indicated the high purity of graphene grown on Cu foils. These results also show that the polycrystalline copper foil morphology has negligible effect on the growth of monolayer graphene.

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Acknowledgments

The authors thank the Director, CSIR-NAL for giving permission to publish these results. Mr. Jakeer Khan and Mr. Siju are thanked for their support in HFCVD system setup and FESEM studies.

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Authors and Affiliations

  1. Nanomaterials Research Laboratory, Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore, 560 017, India

    N. Selvakumar & Harish C. Barshilia

  2. Materials Research Center, Indian Institute of Science, Bangalore, 560 012, India

    N. Selvakumar, B. Vadivel & S. B. Krupanidhi

  3. Electron Microscopy Group, Defence Metallurgical Research Laboratory, Hyderabad, 500 058, India

    D. V. Sridhara Rao

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  1. N. Selvakumar
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  2. B. Vadivel
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  3. D. V. Sridhara Rao
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Correspondence to N. Selvakumar or Harish C. Barshilia.

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Selvakumar, N., Vadivel, B., Rao, D.V.S. et al. Controlled growth of high-quality graphene using hot-filament chemical vapor deposition. Appl. Phys. A 122, 943 (2016). https://doi.org/10.1007/s00339-016-0483-z

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  • DOI: https://doi.org/10.1007/s00339-016-0483-z

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