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Tuning electronic structure of SnS2 nanosheets by vertical electric field: a first-principles investigation

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Abstract

Based on density functional theory, we investigated band gap tuning in transition-metal dichalcogenides SnS2 nanosheets by external electric fields applied perpendicular to the layers. We show that the fundamental band gap value of 2H and 4H SnS2 multilayer structures continuously decreases with increasing strength of applied electric fields, eventually rendering them metallic. We interpret our results in the light of the giant Stark effect and obtain a robust relationship, which is essentially characterized by the interlayer spacing, for the rate of band gap change with applied external field. And it is also valid for monolayer structure, though it need very large electric filed to make the gap change.

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Acknowledgments

This work is supported by The High Performance Computing Center of Henan Normal University; The Basic Research projects with Cutting-Edge Technology of Henan Province (No. 122300413208); Fund for Young Teachers in Colleges of Henan province (No. 01026611010); The Nature Science Foundation of China (Nos. U1304518, U1304109, 11204064, 11304084).

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Authors and Affiliations

  1. Center for Clean Energy and Quantum Structures and School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450052, Henan, China

    Peng Guo & Yu Jia

  2. College of Science, Zhongyuan University of Technology, Zhengzhou, 450007, Henan, China

    Peng Guo

  3. College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, 453007, China

    Tianxing Wang & Congxin Xia

  4. International Joint Research Laboratory for Quantum Functional Materials of Henan, Zhengzhou University, Zhengzhou, 450052, Henan, China

    Peng Guo & Yu Jia

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  1. Peng Guo
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  2. Tianxing Wang
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  4. Yu Jia
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Correspondence to Peng Guo.

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Guo, P., Wang, T., Xia, C. et al. Tuning electronic structure of SnS2 nanosheets by vertical electric field: a first-principles investigation. Appl. Phys. A 122, 684 (2016). https://doi.org/10.1007/s00339-016-0164-y

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  • DOI: https://doi.org/10.1007/s00339-016-0164-y

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