Tailoring of ZnO with selected group-II elements for LED materials
The semiconductor ZnO is a promising candidate for its applications in light-emitting diodes. In this study ZnO nanostructures tailored with selected group-II elements were synthesized using sol–gel-based fuel-agent-assistive chemical technique. Structural studies from X-ray diffraction analysis revealed the presence of wurtzite hexagonal crystal structure in all compositions confirming the stability of the Mg-doped structure while indicating presence of some traces of un-reacted and oxides of Sr and Ba in other compositions. Lattice parameters, crystallite size, lattice strain, density, and cell volume were extracted from X-ray diffraction data. Morphology and elemental composition analysis showed exact correlation with structural arrangements. The size of particles was also observed with dynamic light-scattering measurements. Absorbance and electrical transport studies were performed using UV–Vis spectrophotometry and four-probe measurements, respectively; the former was used to estimate the band gap of nanostructures. Energy-dispersive X-ray analysis was employed for confirming the substitution of Mg, Sr, and Ba atoms at Zn and O sites. Band gap values show strong dependence upon the tailored ZnO compositions.
KeywordsIonic Radius Lattice Strain Large Ionic Radius High Ionic Radius Wurtzite Hexagonal Crystal Structure
We like to thank Dr. Irshad Hussain and Dr. Falak Sher for providing access to XRD, particle size measurement and UV–Vis facilities to complete this research work.
- 22.S. Atiq, S.A. Siddiqi, F. Abbas, M. Saleema, S.M. Ramay, Chinese. J. Chem. Phys. 26, 457 (2013)Google Scholar
- 29.W.S. Rasband, ImageJ, U.S. National Institutes of Health, Bethesda, Maryland, USA, (1997–2014)Google Scholar
- 36.J.I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971)Google Scholar