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Strain effect on ferroelectric polarization of epitaxial LuFeO3 thin films

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Abstract

Epitaxial LuFeO3(LFO) thin films were deposited on La0.5Sr0.5MnO3(LSMO)/LaAlO3(LAO) substrates by pulsed laser deposition method. The LFO thin film with a thickness of 100 nm exhibited tetragonally strained structure on the LSMO/LAO substrate, in which the film showed c/a ratio of 1.045 based on X-ray diffraction experiment. The LFO thin film had a remnant polarization of about 15.2 μC/cm2, which was higher than the previously reported values. By using piezoresponse force microscopy study, it was confirmed that the LFO thin films had mosaic ferroelectric domain structure and that their domain wall energy was estimated to be lower than that of PbTiO3 thin films.

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Acknowledgments

This study was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (No. 2015R1A2A2A05027951).

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Authors and Affiliations

  1. Department of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yongin, 446-701, South Korea

    Yoonho Ahn & Jong Yeog Son

  2. Department of Nanoenergy Engineering, Pusan National University, Busan, 609-735, South Korea

    Joonkyung Jang

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  1. Yoonho Ahn
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Correspondence to Yoonho Ahn or Jong Yeog Son.

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Ahn, Y., Jang, J. & Son, J.Y. Strain effect on ferroelectric polarization of epitaxial LuFeO3 thin films. Appl. Phys. A 122, 531 (2016). https://doi.org/10.1007/s00339-016-0077-9

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