Skip to main content


Log in

Spectral properties of a lateral p–n homojunction-structured visible silicon light-emitting diode fabricated by dressed-photon–phonon-assisted annealing

  • Invited Paper
  • Published:
Applied Physics A Aims and scope Submit manuscript


We developed a visible silicon light-emitting diode (Si-LED) with a lateral p–n homojunction using dressed-photon–phonon (DPP)-assisted annealing. The lateral p–n homojunction was fabricated in order to decrease the absorption loss inherent in light emission with a photon energy higher than the band-gap energy of the material. The fabricated Si-LED emitted light in the entire visible range, including the three primary colors. The light extraction efficiency of the Si-LED was estimated to be 7.8 times higher than that of a conventional LED structure with a vertical p–n homojunction. Owing to the efficient light extraction, we clearly observed two novel features in the electroluminescence (EL) spectrum: a nonlinear increase in the EL intensity with the injected forward current, and an emission peak at 2.7 eV, at which there is no singular point in the electronic structure. From these features, we concluded that the EL from the Si-LED originated from the phonon-assisted radiative recombination of carriers with much higher energy than that of the bottom of the conduction band, via DPPs.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others


  1. W. Wilson, P. Szajowski, L. Brus, Science 262, 1242 (1993)

    Article  ADS  Google Scholar 

  2. S. Cloutier, P. Kossyrev, J. Xu, Nat. Mater. 4, 887 (2005)

    Article  ADS  Google Scholar 

  3. F. Maier-Flaig, J. Rinck, M. Stephan, T. Bocksrocker, M. Bruns, C. Kubel, A. Powell, G. Ozin, U. Lemmer, Nano Lett. 13, 475 (2013)

    Article  ADS  Google Scholar 

  4. L. Canham, Appl. Phys. Lett. 57, 1046 (1990)

    Article  ADS  Google Scholar 

  5. A. Cullis, L. Canham, Nature 353, 335 (1991)

    Article  ADS  Google Scholar 

  6. J. Park, L. Gu, G. von Maltzahn, E. Ruoslahti, S. Bhatia, M. Sailor, Nat. Mater. 8, 331 (2009)

    Article  ADS  Google Scholar 

  7. P. Schmidt, R. Berndt, M. Vexler, Phys. Rev. Lett. 99, 246103 (2007)

    Article  ADS  Google Scholar 

  8. R. Newman, Phys. Rev. 100, 700 (1955)

    Article  ADS  Google Scholar 

  9. C. Cho, C. Aspetti, J. Park, R. Agarwal, Nat. Photon. 7, 285 (2013)

    Article  ADS  Google Scholar 

  10. T. Kawazoe, M. Mueed, M. Ohtsu, Appl. Phys. B 104, 747 (2011)

    Article  ADS  Google Scholar 

  11. N. Wada, T. Kawazoe, M. Ohtsu, Appl. Phys. B 108, 25 (2012)

    Article  ADS  Google Scholar 

  12. M. Yamaguchi, T. Kawazoe, M. Ohtsu, Appl. Phys. A 115, 119 (2014)

    Article  ADS  Google Scholar 

  13. M. Tran, T. Kawazoe, M. Ohtsu, Appl. Phys. A 115, 105 (2013)

    Article  ADS  Google Scholar 

  14. M. Ohtsu, Dressed Photons: Concepts of Light–Matter Fusion Technology (Springer, Berlin, 2013)

    Google Scholar 

  15. Y. Tanaka, K. Kobayashi, J. Microsc. 229, 228 (2008)

    Article  MathSciNet  Google Scholar 

  16. T. Kawazoe, K. Kobayashi, S. Takubo, M. Ohtsu, J. Chem. Phys. 122, 024715 (2005)

    Article  ADS  Google Scholar 

  17. Y. Tanaka, K. Kobayashi, Phys. E 40, 297 (2007)

    Article  Google Scholar 

  18. M. Green, M. Keevers, Progr. Photovoltaics Res. Appl. 3, 189 (1995)

    Article  Google Scholar 

  19. P. Giannozzi, S. de Gironcoli, Phys. Rev. B 43, 7231 (1991)

    Article  ADS  Google Scholar 

  20. K. Sieh, P. Smith, Phys. Status Solidi (b) 129, 259 (1985)

    Article  ADS  Google Scholar 

Download references


The authors thank Teijin Co. Ltd. for providing the NanoGram® Si ink. This work was partially supported by a MEXT Grant-in-Aid for Scientific Research (B) (No. 26286022), a MEXT Grant-in-Aid for Exploratory Research Program (No. 26630122), and the JSPS Core-to-Core Program (A. Advanced Research Networks).

Author information

Authors and Affiliations


Corresponding author

Correspondence to T. Yatsui.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Yamaguchi, M., Kawazoe, T., Yatsui, T. et al. Spectral properties of a lateral p–n homojunction-structured visible silicon light-emitting diode fabricated by dressed-photon–phonon-assisted annealing. Appl. Phys. A 121, 1389–1394 (2015).

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: