Abstract
In this paper, nanocrystalline ZnO film with porous structure was successfully prepared on alumina substrate by the technology of screen printing and the subsequent heat treatment. The fundamental characteristics of the as-prepared sample were examined through XRD, FE-SEM, EDX and PL spectra measurements. Meanwhile, photoelectric responses of it were tested under UV and white light irradiation, respectively. Different photocurrent curves were obtained. Under UV light, the photocurrent with comparatively high amplitude of each cycle could mostly recover upon the light off. While for white light, the photocurrent with low amplitude just partially recovered when the light was turned off. This phenomenon indicated that, after the white light off, a large number of free electrons still remained within the materials. To calculate the amount of the remained free electrons, three photocurrent parameters, which are related to the density of free electrons in ZnO, were defined for the first time. Furthermore, the explanations for the different photoelectric responses of ZnO based on the double Schottky barrier model were also proposed.
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Acknowledgments
This work was supported by the Nature Science Foundation of China (No. 50927201 and U1204501), and Key Project of He’nan Educational Committee (Grant No. 15A430039). The authors are also grateful to Analytical and Testing Center of Huazhong University of Science and Technology.
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Zou, Z., Qiu, Y., Xie, C. et al. Fabrication and different photoelectric responses of nanocrystalline ZnO film irradiated with UV and white light in dry air. Appl. Phys. A 120, 1299–1307 (2015). https://doi.org/10.1007/s00339-015-9388-5
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DOI: https://doi.org/10.1007/s00339-015-9388-5