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The effect of Ti and O ion implantation on the resistive switching in Pt/TiO2−x /Pt devices

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Abstract

The effects of Ti and O implantation on TiO2−x resistive switches are systemically investigated. The forming voltage drops monotonically with Ti implantation dose and forming vanishes completely at 1016 ions/cm2, whereas oxygen implantation causes a decrease and then increase in forming voltage. The ON/OFF current ratio becomes worse with high Ti implantation due to increased leakage currents through the TiO2 film. Furthermore, the forming voltage minimum induced by oxygen implantation can be shifted by thermal annealing, suggesting a careful balance between oxidation, reduction, and ion implantation damage.

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Acknowledgments

This work was supported by the Air Force Office of Scientific Research (AFOSR) under the MURI grant FA9550-12-1-0038 and STTR grant FA8750-12-C-0157.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA

    Ligang Gao, Brian Hoskins & Dmitri Strukov

  2. MicroXact, Inc., 295 Industrial Drive, Christiansburg, VA, 24073, USA

    Madrakhim Zaynetdinov & Vladimir Kochergin

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  1. Ligang Gao
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  2. Brian Hoskins
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  3. Madrakhim Zaynetdinov
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  4. Vladimir Kochergin
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  5. Dmitri Strukov
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Correspondence to Ligang Gao.

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Gao, L., Hoskins, B., Zaynetdinov, M. et al. The effect of Ti and O ion implantation on the resistive switching in Pt/TiO2−x /Pt devices. Appl. Phys. A 120, 1599–1603 (2015). https://doi.org/10.1007/s00339-015-9368-9

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  • DOI: https://doi.org/10.1007/s00339-015-9368-9

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