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Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

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Abstract

The development of cost-effective and non-toxic thin film materials is vital for fabrication of solar cells. We are presenting a combinatorial synthesis approach (CSA) for the deposition of chalcogenide Sn–Bi–S graded thin films by thermal evaporation. Post-deposition thermal annealing in the temperature range of 200–500 °C in an argon atmosphere has been carried out for the Sn–Bi–S thin films. The effect of annealing treatment and initial composition on the structural properties of the Sn–Bi–S graded thin films was studied by using energy-dispersive X-ray spectroscopy, X-ray diffraction (XRD), and Raman spectroscopy. XRD measurements showed that the thin films were grown in polycrystalline structure. Different microstructural parameters such as crystallite size, dislocation density, and microstrain were estimated after post-deposition thermal treatment and found annealing temperature dependent. From the transmission spectra the estimated optical band gap energy values were found in the range 1.27–1.43 eV for the (Sn/Bi) molar ratio of 2.18–0.67 in a typical sample annealed at 400 °C. Photoconductivity response was determined for incident light of wavelength 300–1100 nm and was observed to be annealing temperature and Sn/Bi molar ratio dependent. Photoconductivity was also noted to depend upon the Sn/Bi molar ratio with Sn-rich samples giving the strongest response. Sn-rich compositions also showed p-type conductivity over the temperature range of 350–400 °C. These findings show that the CSA has potential for the screening of high-quality Sn–Bi–S thin films.

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Acknowledgments

This study was completed in support of Higher Education Commission Pakistan for supporting and providing funds for the abroad visit of one of the authors (G. H. Tariq) through ‘International Research Support Initiative Program (IRSIP)’ and ‘Indigenous 5000 Scholarship Program’ and was also supported by the EPSRC-funded SUPERGEN Project, Photovoltaic Materials for the twentieth century (EP/F029624/2). We are thankful to Michael Sellwood for his help with the deposition equipment and to Richard Hall for encapsulating samples in Pyrex glass ampoules. We are thankful to laboratory colleagues Rob McCracken and Kyle Hutchings for their continuous help during synthesis and characterization and to Jon Painter for providing EDX characterization facility. We are also thankful to Mr. M. Saqib for XRD characterization. One of the authors (G. H. Tariq) is also thankful to the department of education, Govt. of the Punjab, Pakistan, for granting him a leave for this work.

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Authors and Affiliations

  1. Applied Thermal Physics Laboratory, Department of Physics, COMSATS Institute of Information Technology, Islamabad, 44000, Pakistan

    G. H. Tariq & M. Anis-ur-Rehman

  2. Department of Materials and Applied Science, Cranfield University, DCMT, Shrivenham, Swindon, SN6 8LA, UK

    G. H. Tariq & D. W. Lane

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  1. G. H. Tariq
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Correspondence to M. Anis-ur-Rehman.

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Tariq, G.H., Lane, D.W. & Anis-ur-Rehman, M. Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon. Appl. Phys. A 120, 1407–1414 (2015). https://doi.org/10.1007/s00339-015-9325-7

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  • DOI: https://doi.org/10.1007/s00339-015-9325-7

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