Abstract
The electron impact ionization dynamic has been investigated by Monte Carlo method in n-type InSb under the action of single-cycle pulses with 1 ps duration. The threshold electric field of impact ionization has been estimated to be about 8 kV/cm at 80 K. The number of generated carriers increases rapidly with increasing of electric field strength over threshold, and at 100 kV/cm, normalized electron concentration reaches 14. It is found that impact ionization process is dominant energy loss mechanism for hot carriers with energy larger than threshold energy of impact ionization. The results of calculations are compared with available experimental data. The agreement between theoretical calculations and experimental results was obtained.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D.K. Ferry, Semiconductor transport (Taylor & Francis, London, 2000)
C. Jacoboni, Theory of Electron Transport in Semiconductors: A Pathway from Elementary Physics to Nonequilibrium Green Functions (Springer, Heidelberg, 2010)
R.G. van Welzenis, Appl. Phys. A 26, 157 (1981)
A.R. Beattie, Semicond. Sci. Technol. 7, 401 (1992)
A. Krotkus, Z. Dobrovolskis, Electrical Conductivity of Narrow-Gap Semiconductors (Mokslas, Vilnius, 1988)
S.P. Ashmontas, L.E. Subachius, Sov. Phys. Semiconduct. 13, 1002 (1979)
S. Ašmontas, A. Dargys, L. Subačius, Phys. Stat. Sol. B 100, 691 (1980)
S.P. Ashmontas, J.K. Pozhela, L.E. Subachius, JETP Lett. 33, 564 (1981)
S. Ašmontas, R. Raguotis, S. Bumelienė, Semicond. Sci. Technol. 28, 025019 (2013)
D. Ganichev, A.P. Dmitriev, S.A. Emel’yanov, Y.V. Terent’ev, I.D. Yaroshevski, I.N. Yassievich, Sov. Phys. JETP 63, 256 (1986)
S.D. Ganichev, J. Drener, W. Prettl, Appl. Phys. Lett. 64, 1977 (1994)
S.D. Ganichev, W. Prettl, Intense Terahertz Excitation of Semiconductors (Oxford University Press, New York, 2006)
H. Wen, M. Wiczer, A.M. Lindenberg, Phys. Rev. B 78, 125203 (2008)
M.C. Hoffmann, J. Hebling, H.Y. Hwang, K.-L. Yeh, K.A. Nelson, Phys. Rev. B 79, 161201 (2009)
A.J. Reklaitis, J. Phys. Chem. Solids 42, 891 (1981)
R.C. Curby, D.K. Ferry, Phys. Stat. Sol. A 15, 319 (1973)
C. Jacoboni, P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation (Springer, Wien, 1989)
B.K. Ridley, Quantum Processes in Semiconductors (Oxford University Press, New York, 2013)
R. Mickevičius, R. Raguotis, A. Reklaitis, Sov. Phys. Semiconduct. 16, 226 (1982)
V.G. Orlov, G.S. Sergeev, Phys. Solid Stat. 55, 2215 (2013)
Electronic Archive: New Semiconductor Materials. Characteristics and Properties. www.Ioffe.ru/SVA/NSM/Semicond/InSb/
H. Tanimura, J. Kanasaki, K. Tanimura, Phys. Rev. B 91, 045201 (2015)
Acknowledgments
We would like to thank Prof. J. Gradauskas for stimulating discussions and critical reading of the manuscript.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Ašmontas, S., Raguotis, R. & Bumelienė, S. Monte Carlo study of impact ionization in InSb induced by intense ultrashort terahertz pulses. Appl. Phys. A 120, 1241–1245 (2015). https://doi.org/10.1007/s00339-015-9322-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-015-9322-x