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Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films

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Abstract

Large laser-induced thermoelectric voltages (LITVs) are measured in the electron-doped Nd2−x Ce x CuO4 thin films grown on the vicinal-cut SrTiO3 substrates by pulsed laser deposition. The dependence of LITV signals upon the doping carrier density is investigated by changing the Ce content of the films. The optimum Ce dopant corresponding to the largest voltage is found and is attributed to the two-dimensional transport behaviors of the localized electrons. The shorter laser irradiation always induces the larger voltage signals in samples with richer Ce content, suggesting the optimum dopant level is sensitive to the wavelength of excitation source. Thus, the behaviors of LITV signals are resulted from both effects of the anisotropic thermoelectric transport and the optical properties of the thin films. The doping dependence related with an anisotropic charge transport may come from the change in carrier density and the modification in energy band configuration.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 11464049) and the Key Programs of the Scientific Research Foundation of the Education Bureau of Yunnan Province (Grant No. 2014Z007).

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Authors and Affiliations

  1. Research Institute of Engineering and Technology, Yunnan University, Kunming, 650091, People’s Republic of China

    Fei Xiong & Zheng Zhang

  2. Institute of Advanced Materials for Photo-Electronics, Kunming University of Science and Technology, Kunming, 650093, People’s Republic of China

    Fei Xiong, Hui Zhang, Sheng’an Yang, Dongqi Li, Zheng Zhang & Qingming Chen

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  1. Fei Xiong
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Correspondence to Qingming Chen.

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Xiong, F., Zhang, H., Yang, S. et al. Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films. Appl. Phys. A 120, 717–723 (2015). https://doi.org/10.1007/s00339-015-9246-5

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